TJ30S06M3L,LXHQ
图像仅供参考
请参阅产品规格
请参阅产品规格
757-TJ30S06M3L,LXHQ
TJ30S06M3L,LXHQ
制造商：
说明：
MOSFET 68W 1MHz Automotive; AEC-Q101
MOSFET 68W 1MHz Automotive; AEC-Q101
库存量: 3,702
-
库存：
-
3,702 可立即发货出现意外错误。请稍候重试。
-
生产周期：
-
4 周 大于所示数量的预计工厂生产时间。
定价 (含13% 增值税)
| 数量 | 单价 |
总价
|
|---|---|---|
| ¥13.0741 | ¥13.07 | |
| ¥8.7688 | ¥87.69 | |
| ¥6.1246 | ¥612.46 | |
| ¥4.8251 | ¥2,412.55 | |
| ¥4.4183 | ¥4,418.30 | |
| 整卷卷轴（请按2000的倍数订购） | ||
| ¥3.9324 | ¥7,864.80 | |
| ¥3.5708 | ¥14,283.20 | |
数据表
Application Notes
- Impacts of the dv/dt Rate on MOSFETs
- Impacts of the dv/dt Rate on MOSFETs
- MOSFET Avalanche Ruggedness
- MOSFET Avalanche Ruggedness
- MOSFET Gate Driver Circuit
- MOSFET Gate Driver Circuit
- MOSFET Parallening (Parasitic Oscillation Between Parallel Power MOSFETs)
- MOSFET Parallening (Parasitic Oscillation Between Parallel Power MOSFETs)
- Parasitic Oscillation and Ringing of Power MOSFETs
- Parasitic Oscillation and Ringing of Power MOSFETs
- Power MOSFET Electrical Characteristics
- Power MOSFET Electrical Characteristics
- Power MOSFET Maximum Ratings
- Power MOSFET Maximum Ratings
- Power MOSFET Selecting MOSFETs and Consideration for Circuit Design
- Power MOSFET Selecting MOSFETs and Consideration for Circuit Design
- Power MOSFET Structure and Characteristics
- Power MOSFET Structure and Characteristics
- Power MOSFET Thermal Design and Attachment of a Thermal Fin
- Power MOSFET Thermal Design and Attachment of a Thermal Fin
Models
Product Catalogs
Test/Quality Data
- CNHTS:
- 8541290000
- USHTS:
- 8541290065
- TARIC:
- 8541290000
- ECCN:
- EAR99
Toshiba Electronic Devices & Storage Corporation Automotive products
may be used as engineering samples, however; they are not intended for
volume automotive production or reliability testing without prior
approval by Toshiba Semiconductor and Storage.
Please contact a Mouser Technical Sales Representative for
further assistance.
5-0320-2