U-MOSVI Small Signal MOSFETs

Toshiba U-MOSVI Small Signal MOSFETs offer a variety of gate drive voltages required for many different types of mobile devices. They are available in single, dual, N-channel, P-channel and various voltage versions, providing a wide variety of options for designers. Each MOSFET addresses the need to support high-current charging with low voltage and low RDS(on) requirements. The compact packages and and low voltage operation make Toshiba U-MOSVI Small Signal MOSFETs an ideal solution for high-density packaging requirements in smart phones and game consoles.

结果: 86
选择 图像 零件编号 制造商 描述 数据表 供货情况 单价(含13%增值税) 根据您的数量,按照单价筛选表格中的结果。 数量 RoHS ECAD模型 技术 安装风格 封装 / 箱体 晶体管极性 通道数量 Vds-漏源极击穿电压 Id-连续漏极电流 Rds On-漏源导通电阻 Vgs - 栅极-源极电压 Vgs th-栅源极阈值电压 Qg-栅极电荷 最小工作温度 最大工作温度 Pd-功率耗散 通道模式 资格 商标名 封装
Toshiba MOSFET PWR MGT 1.5V Drive P-Ch MOS -20V
26,403预期 2026/4/3
最低: 1
倍数: 1
卷轴: 3,000

Si SMD/SMT UDFN-6 P-Channel 1 Channel 20 V 10 A 15.3 mOhms - 8 V, 8 V 300 mV 29.9 nC - 55 C + 150 C 2 W Enhancement U-MOSVI Reel, Cut Tape, MouseReel
Toshiba MOSFET P Channel -20V -6A AECQ MOSFET
98,982预期 2026/2/16
最低: 1
倍数: 1
卷轴: 3,000

Si SMD/SMT SOT-23F-3 P-Channel 1 Channel 20 V 6 A 29.8 mOhms - 8 V, 6 V 1 V 12.8 nC - 55 C + 150 C 2 W Enhancement AEC-Q101 Reel, Cut Tape, MouseReel
Toshiba MOSFET Small-signal MOSFET ID: 1.4A, VDSS: 20V
139,603在途量
最低: 1
倍数: 1
卷轴: 10,000

Si SMD/SMT CST3-3 N-Channel 1 Channel 20 V 1.4 A 840 mOhms - 8 V, 8 V 400 mV 1 nC - 55 C + 150 C 500 mW Enhancement U-MOSVII-H Reel, Cut Tape, MouseReel
Toshiba MOSFET Small Signal MOSFET P-ch Vdss:-20V Vgss:-8/+6V Id:-5.5A
6,000预期 2026/2/16
最低: 1
倍数: 1
卷轴: 3,000

Si SMD/SMT UFM-3 P-Channel 1 Channel 20 V 5.5 A 29.8 mOhms - 8 V, 6 V 1 V 12.8 nC - 55 C + 150 C 1 W Enhancement AEC-Q101 U-MOSVI Reel, Cut Tape, MouseReel
Toshiba MOSFET Small Signal MOSFET P-ch Vdss:-30V Vgss:-20/+10V Id:-4A
9,000预期 2026/6/15
最低: 1
倍数: 1
卷轴: 3,000

Si SMD/SMT SOT-23F-3 P-Channel 1 Channel 30 V 4 A 71 mOhms - 20 V, 10 V 2 V 5.9 nC - 55 C + 150 C 2 W Enhancement AEC-Q101 U-MOSVI Reel, Cut Tape, MouseReel
Toshiba MOSFET N-Ch U-MOSVI FET ID 6A 30VDSS 340pF
18,000预期 2026/3/2
最低: 1
倍数: 1
卷轴: 3,000

Si SMD/SMT SOT-23-3 N-Channel 1 Channel 30 V 6 A 56 mOhms - 20 V, 20 V 2.5 V 2.7 nC - 55 C + 150 C 1 W Enhancement AEC-Q100 U-MOSVII-H Reel, Cut Tape, MouseReel
Toshiba MOSFET SM Sig P-CH MOS ID -6A -20V -8 VGSS
6,000预期 2026/2/13
最低: 1
倍数: 1
卷轴: 3,000

Si SMD/SMT UDFN-6 P-Channel 1 Channel 20 V 6 A 89.6 mOhms - 8 V, 8 V 1 V 12.8 nC - 55 C + 150 C 1 W Enhancement U-MOSVI Reel, Cut Tape, MouseReel
Toshiba MOSFET Small Signal MOSFET P-ch Vdss:-20V Vgss:-8/+6V Id:-3.2A 无库存交货期 12 周
最低: 1
倍数: 1
卷轴: 3,000

Si SMD/SMT UFM-3 P-Channel 1 Channel 20 V 3.2 A 93 mOhms - 8 V, 6 V 1 V 4.7 nC + 150 C 1 W Enhancement U-MOSVI Reel, Cut Tape, MouseReel

Toshiba MOSFET N-Ch -40V FET 1650pF -5A 1.9W 20nC 无库存交货期 12 周
最低: 2,500
倍数: 2,500
卷轴: 2,500

Si SMD/SMT SOP-8 P-Channel 1 Channel 40 V 5 A 66 mOhms - 25 V, 20 V 2 V 20 nC - 55 C + 150 C 1.9 W Enhancement U-MOSVI Reel
Toshiba MOSFET SM Sig MOS 2 in 1 P-Ch -4A -20V 8V GS 无库存交货期 16 周
最低: 1
倍数: 1
卷轴: 3,000

Si SMD/SMT UDFN-6 P-Channel 2 Channel 20 V 4 A 242 mOhms - 8 V, 8 V 1 W U-MOSVI Reel, Cut Tape, MouseReel
Toshiba MOSFET P-Ch MOS -80A -40V 100W 7770pF 0.0052 无库存交货期 20 周
最低: 2,000
倍数: 2,000
卷轴: 2,000

Si SMD/SMT DPAK-3 (TO-252-3) P-Channel 1 Channel 40 V 80 A 5.2 mOhms 100 W AEC-Q100 U-MOSVI Reel