FDME10xx PowerTrench® MOSFETs

onsemi FDME10xx PowerTrench® MOSFETs are designed specifically as a single package solution for the battery charge switch in cellular handsets and other ultra-portable applications. The  FDME1023PZT features two independent P-Channel MOSFETs with low on-state resistance for minimum conduction losses. The FDME1024NZT is a dual N-Channel device with low on-state resistance for minimum conduction losses. The FDME1034CZT is a complementary PowerTrench device with an independent N-Channel and P-Channel MOSFET with low on-state resistance. The FDME1034CZT is minimized to allow high frequency switching directly from the controlling device.

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选择 图像 零件编号 制造商 描述 数据表 供货情况 单价(含13%增值税) 根据您的数量,按照单价筛选表格中的结果。 数量 RoHS ECAD模型 技术 安装风格 封装 / 箱体 晶体管极性 通道数量 Vds-漏源极击穿电压 Id-连续漏极电流 Rds On-漏源导通电阻 Vgs - 栅极-源极电压 Vgs th-栅源极阈值电压 Qg-栅极电荷 最小工作温度 最大工作温度 Pd-功率耗散 通道模式 商标名 封装
onsemi MOSFET 20V Complementary PowerTrench 2,484库存量
5,000预期 2027/1/8
最低: 1
倍数: 1
卷轴: 5,000

Si SMD/SMT UMLP-6 N-Channel, P-Channel 2 Channel 20 V 3.4 A 66 mOhms, 142 mOhms - 8 V, 8 V 700 mV, 600 mV 3 nC, 5.5 nC - 55 C + 150 C 1.3 W Enhancement PowerTrench Reel, Cut Tape, MouseReel
onsemi MOSFET 20V Dual N-Channel PowerTrench
142,000在途量
最低: 1
倍数: 1
卷轴: 5,000

Si SMD/SMT UMLP-6 N-Channel 2 Channel 20 V 3.4 A 55 mOhms - 8 V, 8 V 700 mV 3 nC - 55 C + 150 C 1.3 W Enhancement PowerTrench Reel, Cut Tape, MouseReel