CFD7 CoolMOS™ MOSFET

Infineon Technologies CFD7 CoolMOS™ MOSFET非常适合用于谐振大功率拓扑结构,采用高压超级结MOSFET技术。这些MOSFET内置快速体二极管,完善了CoolMOS 7系列。典型的大功率SMPS应用包括服务器、电信和电动汽车充电站。

结果: 78
选择 图像 零件编号 制造商 描述 数据表 供货情况 单价(含13%增值税) 根据您的数量,按照单价筛选表格中的结果。 数量 RoHS ECAD模型 技术 安装风格 封装 / 箱体 晶体管极性 通道数量 Vds-漏源极击穿电压 Id-连续漏极电流 Rds On-漏源导通电阻 Vgs - 栅极-源极电压 Vgs th-栅源极阈值电压 Qg-栅极电荷 最小工作温度 最大工作温度 Pd-功率耗散 通道模式 资格 商标名 封装
Infineon Technologies MOSFET HIGH POWER_NEW 3,816库存量
最低: 1
倍数: 1
卷轴: 2,500

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 600 V 14 A 144 mOhms - 20 V, 20 V 3.5 V 28 nC - 55 C + 150 C 76 W Enhancement CoolMOS Reel, Cut Tape, MouseReel

Infineon Technologies MOSFET HIGH POWER_NEW 465库存量
最低: 1
倍数: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 38 A 55 mOhms - 20 V, 20 V 3.5 V 79 nC - 55 C + 150 C 178 W Enhancement Tube
Infineon Technologies MOSFET HIGH POWER_NEW 78库存量
最低: 1
倍数: 1
卷轴: 750

Si SMD/SMT HDSOP-22 N-Channel 650 V 52 A 45 mOhms - 20 V, 20 V 4.5 V 79 nC - 55 C + 150 C 297 W Enhancement CoolMOS Reel, Cut Tape
Infineon Technologies MOSFET HIGH POWER_NEW 86库存量
最低: 1
倍数: 1
卷轴: 750

Si SMD/SMT HDSOP-22 N-Channel 1 Channel 650 V 36 A 80 mOhms - 20 V, 20 V 4.5 V 50 nC - 55 C + 150 C 223 W Enhancement Reel, Cut Tape
Infineon Technologies MOSFET HIGH POWER_NEW 725库存量
最低: 1
倍数: 1
卷轴: 750

Si - 20 V, 20 V CoolMOS Reel, Cut Tape

Infineon Technologies MOSFET HIGH POWER_NEW 191库存量
最低: 1
倍数: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 21 A 105 mOhms - 20 V, 20 V 3.5 V 42 nC - 55 C + 150 C 106 W Enhancement Tube
Infineon Technologies MOSFET HIGH POWER_NEW 840库存量
2,000预期 2026/3/2
最低: 1
倍数: 1
卷轴: 1,000

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 600 V 50 A 40 mOhms - 20 V, 20 V 4 V 107 nC - 55 C + 150 C 227 W Enhancement Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET AUTOMOTIVE_COOLMOS 860库存量
最低: 1
倍数: 1
卷轴: 1,000
Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 650 V 21 A 115 mOhms - 20 V, 20 V 4 V 41 nC - 40 C + 150 C 114 W Enhancement AEC-Q101 CoolMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET HIGH POWER_NEW 4,315库存量
最低: 1
倍数: 1
卷轴: 2,500

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 600 V 16 A 145 mOhms - 20 V, 20 V 3.5 V 31 nC - 55 C + 150 C 83 W Enhancement Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET HIGH POWER_NEW 3,332库存量
最低: 1
倍数: 1
卷轴: 1,700

Si SMD/SMT HDSOP-10 N-Channel 1 Channel 600 V 33 A 90 mOhms - 20 V, 20 V 4.5 V 42 nC - 55 C + 150 C 227 W Enhancement Reel, Cut Tape
Infineon Technologies MOSFET HIGH POWER_NEW 1,029库存量
3,000预期 2026/6/11
最低: 1
倍数: 1
卷轴: 3,000

Si SMD/SMT VSON-4 N-Channel 1 Channel 600 V 40 A 60 mOhms - 20 V, 20 V 3.5 V 79 nC - 40 C + 150 C 219 W Enhancement Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET HIGH POWER_NEW 1,784库存量
最低: 1
倍数: 1
卷轴: 3,000

Si SMD/SMT VSON-4 N-Channel 1 Channel 600 V 33 A 66 mOhms - 20 V, 20 V 3.5 V 67 nC - 40 C + 150 C 189 W Enhancement CoolMOS Reel, Cut Tape
Infineon Technologies MOSFET HIGH POWER_NEW 1,087库存量
最低: 1
倍数: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 31 A 57 mOhms - 20 V, 20 V 3.5 V 67 nC - 55 C + 150 C 156 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET HIGH POWER_NEW 740库存量
最低: 1
倍数: 1
卷轴: 2,000

Si SMD/SMT HSOF-8 N-Channel 1 Channel 600 V 52 A 45 mOhms - 20 V, 20 V 4 V 79 nC - 55 C + 150 C 270 W Enhancement Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET HIGH POWER_NEW 1,880库存量
最低: 1
倍数: 1
卷轴: 2,000

Si CoolMOS Reel, Cut Tape
Infineon Technologies MOSFET HIGH POWER_NEW 1,984库存量
最低: 1
倍数: 1
卷轴: 2,000

Si CoolMOS Reel, Cut Tape

Infineon Technologies MOSFET HIGH POWER_NEW 450库存量
最低: 1
倍数: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 101 A 18 mOhms - 20 V, 20 V 3.5 V 251 nC - 55 C + 150 C 416 W Enhancement Tube

Infineon Technologies MOSFET HIGH POWER_NEW 806库存量
最低: 1
倍数: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 63 A 26 mOhms - 20 V, 20 V 3.5 V 141 nC - 55 C + 150 C 278 W Enhancement CoolMOS Tube

Infineon Technologies MOSFET HIGH POWER_NEW 847库存量
最低: 1
倍数: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 50 A 40 mOhms - 20 V, 20 V 3.5 V 109 nC - 55 C + 150 C 227 W Enhancement Tube

Infineon Technologies MOSFET HIGH POWER_NEW 732库存量
最低: 1
倍数: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 25 A 90 mOhms - 20 V, 20 V 3.5 V 51 nC - 55 C + 150 C 125 W Enhancement Tube
Infineon Technologies MOSFET HIGH POWER_NEW 8库存量
最低: 1
倍数: 1
卷轴: 1,000

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 600 V 21 A 105 mOhms - 20 V, 20 V 4.5 V 42 nC - 55 C + 150 C 106 W Enhancement Reel, Cut Tape
Infineon Technologies MOSFET LOW POWER_NEW 212库存量
500预期 2026/3/2
最低: 1
倍数: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 9 A 237 mOhms - 20 V, 20 V 3.5 V 18 nC - 55 C + 150 C 52 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET HIGH POWER_NEW 13库存量
最低: 1
倍数: 1
卷轴: 2,000

Si CoolMOS Reel, Cut Tape
Infineon Technologies MOSFET HIGH POWER_NEW 41库存量
最低: 1
倍数: 1
卷轴: 750

Si SMD/SMT HDSOP-22 N-Channel 1 Channel 650 V 34 A 75 mOhms - 20 V, 20 V 4.5 V 51 nC - 55 C + 150 C 219 W Enhancement CoolMOS Reel, Cut Tape
Infineon Technologies MOSFET HIGH POWER_NEW 218库存量
500预期 2026/2/24
最低: 1
倍数: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 11 A 125 mOhms - 20 V, 20 V 3.5 V 36 nC - 55 C + 150 C 32 W Enhancement CoolMOS Tube