DI008N09SQ

Diotec Semiconductor
637-DI008N09SQ
DI008N09SQ

制造商:

说明:
MOSFET MOSFET, SO-8, 90V, 8A, 150C, N

ECAD模型:
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库存量: 3,920

库存:
3,920 可立即发货
生产周期:
10 周 大于所示数量的预计工厂生产时间。
数量大于3920的订购须受最低订购要求的限制。
最少: 1   倍数: 1
单价:
¥-.--
总价:
¥-.--
预估关税:

定价 (含13% 增值税)

数量 单价
总价
¥6.2037 ¥6.20
¥4.8929 ¥48.93
¥2.9267 ¥292.67
¥2.9041 ¥1,452.05
¥2.8137 ¥2,813.70
¥2.486 ¥4,972.00
整卷卷轴(请按4000的倍数订购)
¥2.3278 ¥9,311.20
¥2.0114 ¥16,091.20
¥1.9662 ¥47,188.80

产品属性 属性值 选择属性
Diotec Semiconductor
产品种类: MOSFET
RoHS:  
Si
SO-8
DI008N09SQ
Reel
Cut Tape
商标: Diotec Semiconductor
湿度敏感性: Yes
产品类型: MOSFETs
系列: DI0XX
工厂包装数量: 4000
子类别: Transistors
零件号别名: N-CHANNEL
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已选择的属性: 0

合规代码
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
KRHTS:
8541299000
TARIC:
8541290000
MXHTS:
8541299900
ECCN:
EAR99
原产地分类
原产国:
瑞士
组装原产国/地区:
不可用
扩散国家:
不可用
发货时,国家/地区可能会发生变化。

Advanced Trench Technology Power MOSFETs

Diotec Semiconductors Advanced Trench Technology Power MOSFETs feature low on-state resistance and fast switching time. These MOSFETs components are available in standard commercial/industrial grading. The power MOSFETs are offered as N, P, or dual N+P channel types in single, dual, and H bridge configurations. These MOSFETs offer a 100mA to 280A current range and a 20V to 250V voltage range.

DI008N09SQ N-Channel Power MOSFET

Diotec Semiconductor DI008N09SQ N-Channel Power MOSFET is a 90V drain-source voltage (VDSS) N-channel power MOSFET in a tiny, space-saving SO-8 package. It comes with an 8A continuous drain current (ID) and 2W power dissipation (Ptot). The device offers a low drain-source on-state resistance of 75mΩ typical (VGS=4.5V ID=3A). The Diotec Semiconductor DI008N09SQ is ideal for power management units, battery-powered devices, load switches, polarity protection, and DC/DC converter applications.