DI008N09SQ

Diotec Semiconductor
637-DI008N09SQ
DI008N09SQ

制造商：

说明：
MOSFET MOSFET, SO-8, 90V, 8A, 150C, N

数据表:
ECAD模型:
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库存量: 3,970

库存：
3,970 可立即发货
数量大于3970的订购须受最低订购要求的限制。
最少： 1   倍数： 1
单价:
¥-.--
总价:
¥-.--
预估关税:

定价 (含13% 增值税)

数量 单价
总价
¥7.3563 ¥7.36
¥4.8138 ¥48.14
¥3.1301 ¥313.01
¥2.5312 ¥1,265.60
¥2.2713 ¥2,271.30
¥2.0792 ¥4,158.40
整卷卷轴（请按4000的倍数订购）
¥1.8871 ¥7,548.40
¥1.5933 ¥12,746.40
¥1.582 ¥37,968.00

产品属性 属性值 选择属性
Diotec Semiconductor
产品种类: MOSFET
RoHS:  
Si
SO-8
DI008N09SQ
Reel
Cut Tape
商标: Diotec Semiconductor
产品类型: MOSFETs
系列: DI0XX
工厂包装数量: 4000
子类别: Transistors
零件号别名: N-CHANNEL
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已选择的属性: 0

数据表

Models

Product Catalogs

USHTS:
8541290000
TARIC:
8541290000
ECCN:
EAR99

Advanced Trench Technology Power MOSFETs

Diotec Semiconductors Advanced Trench Technology Power MOSFETs feature low on-state resistance and fast switching time. These MOSFETs components are available in standard commercial/industrial grading. The power MOSFETs are offered as N, P, or dual N+P channel types in single, dual, and H bridge configurations. These MOSFETs offer a 100mA to 280A current range and a 20V to 250V voltage range.

DI008N09SQ N-Channel Power MOSFET

Diotec Semiconductor DI008N09SQ N-Channel Power MOSFET is a 90V drain-source voltage (VDSS) N-channel power MOSFET in a tiny, space-saving SO-8 package. It comes with an 8A continuous drain current (ID) and 2W power dissipation (Ptot). The device offers a low drain-source on-state resistance of 75mΩ typical (VGS=4.5V ID=3A). The Diotec Semiconductor DI008N09SQ is ideal for power management units, battery-powered devices, load switches, polarity protection, and DC/DC converter applications.

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