OptiMOS™ 6功率MOSFET

Infineon Technologies OptiMOS™ 6功率MOSFET是先进的下一代创新性器件,性能极为出色。OptiMOS 6系列采用薄晶圆技术,显著提升了性能。与同类产品相比,OptiMOS 6功率MOSFET的RDS(ON)降低了30%,并针对同步整流进行了优化。

结果: 107
选择 图像 零件编号 制造商 描述 数据表 供货情况 单价(含13%增值税) 根据您的数量,按照单价筛选表格中的结果。 数量 RoHS ECAD模型 技术 安装风格 封装 / 箱体 晶体管极性 通道数量 Vds-漏源极击穿电压 Id-连续漏极电流 Rds On-漏源导通电阻 Vgs - 栅极-源极电压 Vgs th-栅源极阈值电压 Qg-栅极电荷 最小工作温度 最大工作温度 Pd-功率耗散 通道模式 商标名 封装
Infineon Technologies MOSFET IFX FET >150 - 400V 74库存量
4,000预期 2026/6/24
最低: 1
倍数: 1
: 1,000

Si SMD/SMT TO-263-3 N-Channel 1 Channel 200 V 39 A 33.9 mOhms - 20 V, 20 V 4.5 V 15.9 nC - 55 C + 175 C 125 W Enhancement Reel, Cut Tape
Infineon Technologies MOSFET IFX FET 40V 42库存量
5,000预期 2026/7/1
最低: 1
倍数: 1
: 5,000

Si SMD/SMT TTFN-9 N-Channel 1 Channel 40 V 610 A 470 uOhms - 20 V, 20 V 2.8 V 129 nC - 55 C + 175 C 333 W Enhancement OptiMOS Reel, Cut Tape

Infineon Technologies MOSFET IFX FET 40V 153库存量
20,000预期 2026/10/8
最低: 1
倍数: 1
: 5,000
Si SMD/SMT TDSON-FL-8 N-Channel 1 Channel 40 V 238 A 1.2 mOhms - 20 V, 20 V 2.3 V 25 nC - 55 C + 175 C 125 W Enhancement Reel, Cut Tape
Infineon Technologies MOSFET IFX FET >80 - 100V 92库存量
10,000在途量
最低: 1
倍数: 1
: 5,000

Si SMD/SMT N-Channel 1 Channel 100 V 179 A 3 mOhms - 20 V, 20 V 3.3 V 55 nC - 55 C + 175 C 208 W Enhancement Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET IFX FET 40V 1,911库存量
10,000预期 2026/7/16
最低: 1
倍数: 1
: 5,000

Si SMD/SMT TDSON-FL-8 N-Channel 1 Channel 40 V 285 A 1 mOhms - 20 V, 20 V 2.8 V 67 nC - 55 C + 175 C 150 W Enhancement OptiMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET MOSFET_(20V 40V) 1,582库存量
最低: 1
倍数: 1
: 5,000
Si SMD/SMT TDSON-8 N-Channel 1 Channel 40 V 74 A 5 mOhms - 16 V, 16 V 3 V 13 nC - 55 C + 175 C 52 W Enhancement OptiMOS Reel, Cut Tape
Infineon Technologies MOSFET IFX FET 40V
39,960在途量
最低: 1
倍数: 1
: 5,000

Si SMD/SMT TDSON-FL-8 N-Channel 1 Channel 40 V 381 A 700 uOhms - 20 V, 20 V 1.3 V 94 nC - 55 C + 175 C 188 W Enhancement OptiMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET IFX FET 40V
128,870在途量
最低: 1
倍数: 1
: 5,000

Si SMD/SMT TDSON-FL-8 N-Channel 1 Channel 40 V 100 A 2.2 mOhms - 20 V, 20 V 1.3 V 28 nC - 55 C + 175 C 79 W Enhancement OptiMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET IFX FET 40V
173,566在途量
最低: 1
倍数: 1
: 5,000

Si SMD/SMT TSDSON-FL-8 N-Channel 1 Channel 40 V 40 A 7 mOhms - 20 V, 20 V 2.3 V 9.5 nC - 55 C + 175 C 38 W Enhancement OptiMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET IFX FET 40V
9,600预期 2027/4/15
最低: 1
倍数: 1
: 5,000

Si SMD/SMT TTFN-9 N-Channel 1 Channel 40 V 637 A 450 uOhms - 20 V, 20 V 2.3 V 62 nC - 55 C + 175 C 333 W Enhancement OptiMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET IFX FET 40V
6,000预期 2026/7/2
最低: 1
倍数: 1
: 3,000

Si TSON-12 OptiMOS Reel, Cut Tape
Infineon Technologies MOSFET OptiMOS 6 Power -Transistor, 60 V
5,000预期 2026/10/22
最低: 1
倍数: 1
: 5,000

Si OptiMOS Reel, Cut Tape
Infineon Technologies MOSFET IFX FET >80 - 100V
81,169在途量
最低: 1
倍数: 1
: 5,000

Si SMD/SMT N-Channel 1 Channel 100 V 230 A 2.24 mOhms - 20 V, 20 V 3.3 V 73 nC - 55 C + 175 C 254 W Enhancement Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET IFX FET >80 - 100V
19,570在途量
最低: 1
倍数: 1
: 5,000

Si SMD/SMT N-Channel 1 Channel 100 V 192 A 2.7 mOhms - 20 V, 20 V 3.3 V 58 nC - 55 C + 175 C 217 W Enhancement Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET IFX FET >80 - 100V
19,993在途量
最低: 1
倍数: 1
: 5,000

Si SMD/SMT N-Channel 1 Channel 100 V 97 A 6 mOhms - 20 V, 20 V 3.3 V 26 nC - 55 C + 175 C 125 W Enhancement Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET IFX FET >150 - 400V
9,900预期 2027/3/18
最低: 1
倍数: 1
: 5,000

Si SMD/SMT TDSON-8 N-Channel 1 Channel 200 V 74 A 15.1 mOhms - 20 V, 20 V 3.7 V 31 nC - 55 C + 175 C 200 W Enhancement Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET OptiMOS 6 power MOSFET 150 V normal level in SuperSO8 package
20,000预期 2026/12/31
最低: 1
倍数: 1
: 5,000

Si SMD/SMT PG-TDSON-8 N-Channel 1 Channel 150 V 50 A 15.6 mOhms 20 V 4 V 14.8 nC - 55 C + 175 C 95 W Enhancement OptiMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET IFX FET 40V
9,000在途量
最低: 1
倍数: 1
: 3,000

Si SMD/SMT TFN-10 N-Channel 2 Channel 40 V 299 A 880 uOhms - 20 V, 20 V 2.8 V 69 nC - 55 C + 175 C 167 W Enhancement Reel, Cut Tape

Infineon Technologies MOSFET IFX FET >80 - 100V
58,496在途量
最低: 1
倍数: 1
: 5,000

Si SMD/SMT N-Channel 1 Channel 100 V 75 A 8.04 mOhms - 20 V, 20 V 3.3 V 19 nC - 55 C + 175 C 100 W Enhancement Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET IFX FET 40V
13,336预期 2027/5/20
最低: 1
倍数: 1
: 5,000

Si SMD/SMT TSDSON-FL-8 N-Channel 1 Channel 40 V 40 A 2.8 mOhms - 20 V, 20 V 2.3 V 25 nC - 55 C + 175 C 75 W Enhancement OptiMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET MOSFET_(20V 40V)
3,999预期 2026/11/26
最低: 1
倍数: 1
: 2,000

Si SMD/SMT PG-LHDSO-10-3 N-Channel 40 V 390 A 750 uOhms 20 V 3 V 100 nC - 55 C + 175 C 206 W Enhancement Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET OptiMOS 6 power MOSFET 150 V normal level in DPAK 3-pin package
2,000预期 2026/9/25
最低: 1
倍数: 1
: 1,000

Si SMD/SMT N-Channel 1 Channel 150 V 139 A 4.8 mOhms 20 V 4 V 51 nC - 55 C + 175 C 234 W Enhancement OptiMOS Reel, Cut Tape
Infineon Technologies MOSFET OptiMOS 6 n-channel power MOSFET 80 V in TO-220
500预期 2026/7/2
最低: 1
倍数: 1

Si OptiMOS Tube
Infineon Technologies MOSFET OptiMOS 6 power MOSFET 150 V normal level in TOLL package
1,991预期 2026/11/5
最低: 1
倍数: 1
: 2,000

Si SMD/SMT PG-HSOF-8 N-Channel 1 Channel 150 V 194 A 3.2 mOhms 20 V 4 V 69 nC - 55 C + 175 C 294 W Enhancement OptiMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET IFX FET 40V
2,832预期 2026/12/3
最低: 1
倍数: 1
: 3,000

Si SMD/SMT TSON-12 N-Channel 1 Channel 40 V 656 A 360 uOhms - 20 V, 20 V 2.8 V 206 nC - 55 C + 175 C 300 W Enhancement OptiMOS Reel, Cut Tape, MouseReel