GRFx GaN HEMT Power Transistors

Guerrilla RF GRFx GaN HEMT Power Transistors are unmatched discrete GaN-on-SiC HEMT power transistors designed for high-performance RF applications. These transistors operate across a wide frequency range of DC to 6GHz, 7GHz, and 8GHz with an operating drain voltage of 28V and 50V. The GRFx transistors support both linear and pulsed modes and are 100% DC, and RF production tested. These transistors are housed in a compact, industry-standard 3mm x 3mm QFN-16 surface mount package, are lead-free, and RoHS compliant. Typical applications include cellular infrastructure, radar systems, communications, and test instrumentation.

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数量 RoHS
Guerrilla RF GaN 场效应晶体管 Unmatched Discrete GaN-on-SiC HEMT 15W PSAT at 50V or 8W PSAT at 28V 33库存量
最低： 1
倍数： 1
卷轴: 50
Guerrilla RF GaN 场效应晶体管 Unmatched Discrete GaN-on-SiC HEMT 30W PSAT at 50V or 19W PSAT at 28V 33库存量
最低： 1
倍数： 1
卷轴: 50
Guerrilla RF 射频放大器 Unmatched Discrete GaN-on-SiC HEMT 50W PSAT at 50V or 25W PSAT at 28V