Automotive COOLiRFET™ Power MOSFETs

Infineon Automotive COOLiRFET™ Power MOSFETs are specifically designed for Automotive applications. These HEXFET® Power MOSFETs utilize processing techniques that achieve low ON-resistance per silicon area. Additional features of this design are a +175°C junction operating temperature, fast switching speed, and improved repetitive avalanche rating. These devices offer low conduction losses and robust avalanche performance to deliver higher efficiency, power density, and reliability. With this performance, many applications using these COOLiRFET™ devices run significantly cooler than with state-of-the-art MOSFETs. These features combine to make this design an extremely efficient and reliable device for use in automotive applications and a wide variety of other applications.

结果: 4
选择 图像 零件编号 制造商 描述 数据表 供货情况 单价(含13%增值税) 根据您的数量,按照单价筛选表格中的结果。 数量 RoHS ECAD模型 技术 安装风格 封装 / 箱体 晶体管极性 通道数量 Vds-漏源极击穿电压 Id-连续漏极电流 Rds On-漏源导通电阻 Vgs - 栅极-源极电压 Vgs th-栅源极阈值电压 Qg-栅极电荷 最小工作温度 最大工作温度 Pd-功率耗散 通道模式 资格 商标名 封装
Infineon Technologies MOSFET N-Ch 40V 120A D2PAK-2 OptiMOS-T2 741库存量
最低: 1
倍数: 1
卷轴: 1,000

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 40 V 120 A 2 mOhms - 20 V, 20 V 3 V 176 nC - 55 C + 175 C 300 W Enhancement AEC-Q100 OptiMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET N-Ch 40V 90A D2PAK-2 OptiMOS-T2 971库存量
最低: 1
倍数: 1
卷轴: 1,000

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 40 V 90 A 2.1 mOhms - 20 V, 20 V 3 V 91 nC - 55 C + 175 C 150 W Enhancement AEC-Q100 OptiMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET MOSFET_(20V,40V) 1,128库存量
最低: 1
倍数: 1
卷轴: 5,000

Si SMD/SMT TDSON-8 N-Channel 1 Channel 40 V 100 A 2.3 mOhms - 20 V, 20 V 2.2 V 45 nC - 55 C + 175 C 75 W Enhancement AEC-Q101 OptiMOS Reel, Cut Tape
Infineon Technologies MOSFET MOSFET_(20V 40V) 无库存交货期 9 周
最低: 1
倍数: 1
卷轴: 1,000

Si SMD/SMT TO-263-7 N-Channel 1 Channel 40 V 240 A 1 mOhms - 20 V, 20 V 3 V 221 nC - 55 C + 175 C 231 W Enhancement AEC-Q101 Reel, Cut Tape