APS12627/APS12628 Hall-Effect Sensors

Allegro MicroSystems APS12627/APS12628 Hall-Effect Sensors are dual ultra-sensitive Hall-effect latches optimized for use with ring magnets. These devices feature vertical and planar Hall elements with sensing axes that are orthogonal to one another, providing 90° of phase separation. This phase separation is inherently independent of magnet pole spacing and air gap. No target optimization is required, making them extremely flexible and easy to use.

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数量 RoHS ECAD模型 类型
工作电源电流
最大输出电流
工作点最小值/最大值
最小/最大释放点（Brp）
最小工作温度
最大工作温度
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封装 / 箱体
系列
Allegro MicroSystems 板机接口霍耳效应/磁性传感器 5V 2D LATCH WITH DUAL SIGNAL PATH AND 4US UPDATE RATE
数据表
Hall Effect Latch 5 mA 10 mA 11 G, 41 G - 41 G, - 11 G - 40 C + 150 C SMD/SMT SOT-23W-5 APS12627
Allegro MicroSystems 板机接口霍耳效应/磁性传感器 5V 2D LATCH WITH DUAL SIGNAL PATH AND 4US UPDATE RATE
数据表
Hall Effect Latch 5 mA 10 mA 11 G, 41 G - 41 G, - 11 G - 40 C + 150 C SMD/SMT SOT-23W-5 APS12627
Allegro MicroSystems 板机接口霍耳效应/磁性传感器 5V 2D LATCH WITH DUAL SIGNAL PATH AND 4US UPDATE RATE
数据表
Hall Effect Latch 5 mA 10 mA 11 G, 41 G - 41 G, - 11 G - 40 C + 150 C SMD/SMT SOT-23W-5 APS12627
Allegro MicroSystems 板机接口霍耳效应/磁性传感器 5V 2D LATCH WITH DUAL SIGNAL PATH AND 4US UPDATE RATE
数据表
Hall Effect Latch 5 mA 10 mA 11 G, 41 G - 41 G, - 11 G - 40 C + 150 C SMD/SMT SOT-23W-5 APS12627
Allegro MicroSystems 板机接口霍耳效应/磁性传感器 5V 2D LATCH WITH DUAL SIGNAL PATH AND 4US UPDATE RATE
数据表
Hall Effect Latch 5 mA 10 mA 11 G, 41 G - 41 G, - 11 G - 40 C + 150 C SMD/SMT SOT-23W-5 APS12627
Allegro MicroSystems 板机接口霍耳效应/磁性传感器 5V 2D LATCH WITH DUAL SIGNAL PATH AND 4US UPDATE RATE
数据表
Hall Effect Latch 5 mA 10 mA 11 G, 41 G - 41 G, - 11 G - 40 C + 150 C SMD/SMT SOT-23W-5 APS12627