Si88xx 8V TrenchFET® Power MOSFETs

Vishay Siliconix Si88xx 8V TrenchFET® Power MOSFETs feature the industry's first n- and p-channel power MOSFET in the industry's smallest 0.8 mm by 0.8 mm chip-scale package, in addition to the first n- and p-channel devices to offer on-resistance (RDS(on)) ratings down to 1.2 V in this package size. The Si88xx 8V TrenchFET® Power MOSFETs come in the MICRO FOOT® package that occupies up to 36 % less board space than the next smallest chip-scale devices, yet offer comparable − and even lower − on-resistance (RDS(on)).

结果: 2
选择 图像 零件编号 制造商 描述 数据表 供货情况 单价(含13%增值税) 根据您的数量,按照单价筛选表格中的结果。 数量 RoHS ECAD模型 技术 安装风格 封装 / 箱体 晶体管极性 通道数量 Vds-漏源极击穿电压 Id-连续漏极电流 Rds On-漏源导通电阻 Vgs - 栅极-源极电压 Vgs th-栅源极阈值电压 Qg-栅极电荷 最小工作温度 最大工作温度 Pd-功率耗散 通道模式 商标名 封装
Vishay Semiconductors MOSFET -20V Vds 8V Vgs MICRO FOOT 2,306库存量
15,000在途量
最低: 1
倍数: 1
卷轴: 3,000

Si SMD/SMT MicroFoot-4 P-Channel 1 Channel 20 V 2.7 A 77 mOhms - 8 V, 8 V 800 mV 17 nC - 55 C + 150 C 900 mW Enhancement Reel, Cut Tape, MouseReel
Vishay / Siliconix MOSFET 8V Vds 5V Vgs MICRO FOOT 0.8 x 0.8 6,000库存量
最低: 1
倍数: 1
卷轴: 3,000

Si SMD/SMT MicroFoot-4 N-Channel 1 Channel 8 V 3.5 A 54 mOhms - 5 V, 5 V 350 mV 4.3 nC - 55 C + 150 C 900 mW Enhancement TrenchFET Reel, Cut Tape, MouseReel