TSM2N7002 N-Channel Power MOSFETs
Taiwan Semiconductor TSM2N7002 N-Channel Power MOSFETs feature a low drain-source on-state resistance (RDS(ON)), that minimizes conductive losses. The N-channel power MOSFETs enable a low gate charge for fast power switching. These power MOSFETs are available in single and dual configuration variants. The TSM2N7002 power MOSFETs operate at 60V drain-source breakdown voltage and -55°C to +150°C temperature range. These N-channel power MOSFETs are ideal for low side load switching, level shift circuits, and general switch circuits.
