MCGWF085P10-TP Micro Commercial Components (MCC)

说明：

MOSFET P-CHANNEL MOSFET,DFN3333-8(SWF)

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产品属性	属性值	选择属性
制造商:	Micro Commercial Components (MCC)
产品种类:	MOSFET
发货限制：	Mouser 目前在您所在地区不销售该产品。
RoHS:
技术:	Si
安装风格:	SMD/SMT
封装 / 箱体:	DFN3333-8
晶体管极性:	P-Channel
通道数量:	1 Channel
Vds-漏源极击穿电压:	100 V
Id-连续漏极电流:	16 A
Rds On-漏源导通电阻:	102 mOhms
Vgs - 栅极-源极电压:	20 V
Vgs th-栅源极阈值电压:	2.5 V
Qg-栅极电荷:	44.4 nC
最小工作温度:	- 55 C
最大工作温度:	+ 150 C
Pd-功率耗散:	56.8 W
通道模式:	Enhancement
封装:	Reel
封装:	Cut Tape
商标:	Micro Commercial Components (MCC)
配置:	Single
下降时间:	31 ns
产品类型:	MOSFETs
上升时间:	42 ns
工厂包装数量:	5000
子类别:	Transistors
晶体管类型:	1 P-Channel
典型关闭延迟时间:	91 ns
典型接通延迟时间:	9 ns

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数据表

MCGWF085P10-TP 数据表 (PDF)

CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

MCGWF085P10 Power MOSFET

Micro Commercial Components (MCC) MCGWF085P10 Power MOSFET is a -100V (V_DS) P-channel MOSFET engineered to deliver high performance in compact power systems. This MOSFET is built with Trench MV MOSFET technology and features a high-density cell design for ultra-low R_DS(on), reducing conduction losses for efficient operation. The MCGWF085P10 MOSFET offers good thermal performance and a total gate charge of 44.4nC, making it well-suited for fast switching in high-frequency applications. This compact power MOSFET features a total power dissipation of 56.8W and is housed in a DFN3333-8 (SWF) surface-mount package. The MCGWF085P10 MOSFET is suitable for applications that require efficient switching and power handling in compact designs, such as DC-DC converters, load switches, and battery-powered devices.

P-Channel MOSFETS

Micro Commercial Components (MCC) P-Channel Medium Power MOSFETS feature a low on-resistance (RDS) range from 0.013Ω to 0.52Ω and a high voltage version up to 800V. These MOSFETs utilize advanced trench MOSFET process technology in a wide range of surface-mount packages, including SOT, DFN, SOP, and Dpak. The P-Channel MOSFETs have an operating temperature range from -55°C to 150°C or 175°C.