iS15M7R1S1C SuperQ™ 150V N-Channel Power MOSFETs

iDEAL Semiconductor iS15M7R1S1C SuperQ™ 150V N-Channel Power MOSFETs are high-performance MOSFETs designed to deliver superior efficiency and switching performance in demanding power applications. Built using iDEAL Semiconductor’s proprietary SuperQ™ technology, the iS15M7R1S1C devices offer an exceptionally low R_DS(on) of 6.4mΩ and a total gate charge (Qg) of just 63nC (maximum), enabling faster switching speeds and reduced conduction losses. These MOSFETs support a drain current up to 133A and are housed in a compact PDFN 5mm x 6mm package, making the devices ideal for space-constrained designs. With a low gate threshold voltage and robust avalanche energy handling, the iS15M7R1S1C MOSFETs are well-suited for applications such as boost converters, switch-mode power supply (SMPS) control FETs, secondary side synchronous rectifiers, and motor control, where high efficiency and thermal performance are critical.