SIC10A065T-AU_T0_000A1

Panjit
241-SIC10A065TAUT000
SIC10A065T-AU_T0_000A1

制造商:

说明:
碳化硅肖特基二极管 PJ/10A065T/TP//HF/0.05K/TO-220AC/SIC/TO/SIC-100WH/SIC100W-QI01/PJ//TO220AC-AS06/TO220AC-AS01

寿命周期:
NRND:
不建议用于新设计。
ECAD模型:
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供货情况

库存:
无库存
生产周期:
22 周 预计工厂生产时间。
最少: 2000   倍数: 50
单价:
¥-.--
总价:
¥-.--
预估关税:

定价 (含13% 增值税)

数量 单价
总价
¥40.4427 ¥80,885.40

产品属性 属性值 选择属性
Panjit
产品种类: 碳化硅肖特基二极管
RoHS:  
Through Hole
TO-220AC-2
Single
10 A
650 V
1.5 V
400 A
20 uA
+ 175 C
AEC-Q101
Tube
商标: Panjit
Pd-功率耗散: 115 W
产品类型: SiC Schottky Diodes
工厂包装数量: 50
子类别: Diodes & Rectifiers
Vr - 反向电压 : 650 V
单位重量: 1.890 g
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CAHTS:
8541100090
USHTS:
8541100080
JPHTS:
854110090
KRHTS:
8541109000
TARIC:
8541100000
MXHTS:
8541100199
BRHTS:
85411099
ECCN:
EAR99

SiC Schottky Barrier Diodes

PANJIT Silicon-Carbide (SiC) Schottky Barrier Diodes with low forward-voltage and zero reverse recovery current ensure cooler system temperature under harsh operating conditions of power conversion systems. These SiC diodes feature low conduction and switching loss, high surge current capability, temperature-independent switching behavior, and positive temperature co-efficient on VF. The SiC diodes are available at a range of 2A to 20A forward current (IF) and 650V to 1200V Maximum Repetitive Peak Reverse Voltage (VRRM) ratings. These hard switching and highly reliable diodes operate at high-frequency and offer high system efficiency. The SiC Schottky diodes are ideal for high-temperature applications.