TGS2355-SM

Qorvo
772-TGS2355-SM
TGS2355-SM

制造商：

说明：
RF 开关 IC .5-6GHz SPDT 100 Watt GaN

数据表:
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库存量: 229

库存：
229 可立即发货
生产周期：
12 周 大于所示数量的预计工厂生产时间。
最少： 1   倍数： 1
单价:
¥-.--
总价:
¥-.--
预估关税:

定价 (含13% 增值税)

数量 单价
总价
¥1,935.9273 ¥1,935.93
¥1,394.8381 ¥34,870.95

产品属性 属性值 选择属性
Qorvo
产品种类: RF 开关 IC
RoHS:  
SPDT
500 MHz
6 GHz
1.1 dB
40 dB
- 40 C
+ 85 C
SMD/SMT
QFN-32
Si
TGS2355
Tray
商标: Qorvo
高控制电压: - 48 V
湿度敏感性: Yes
开关数量: Single
工作电源电流: 1 mA
Pd-功率耗散: 35 W
产品类型: RF Switch ICs
工厂包装数量: 50
子类别: Wireless & RF Integrated Circuits
零件号别名: TGS2355 1097064
单位重量: 5.058 g
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已选择的属性: 0

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CNHTS:
8542399000
CAHTS:
8542390000
USHTS:
8542390090
JPHTS:
854239099
TARIC:
8542399000
MXHTS:
8542399999
ECCN:
EAR99

TGS2355-SM High Power GaN Switch

Qorvo TGS2355-SM High Power GaN Switch is a single-pole, double-throw (SPDT) reflective switch that operates from 0.5GHz to 6.0GHz. Fabricated on Qorvo's 00.25µm GaN (Gallium Nitride) on SiC (Silicon Carbide) production process (QGaN25), the TGS2355-SM provides up to 100W input power handling with <1.1dB insertion loss over most of the operating band and greater than 40dB isolation. These qualities make the TGS2355-SM GaN Switch ideal for high-power switching applications across both defense and commercial platforms.

GaN Solutions

Qorvo is your smart RF partner for building solutions using Gallium Nitride (GaN) technology. No longer a technology just for defense and aerospace applications, GaN is enabling higher and higher frequencies in more complex applications, such as phased arrays, radar, base transceiver stations for 5G, cable TV (CATV), VSAT, and defense communications. Qorvo provides proven, record-setting GaN circuit reliability and compact, high-efficiency products. This paves the way for more robust performance, lower operating costs and longer operational lifetimes.

GaN Switches

Qorvo Gallium Nitride (GaN) Switches are suited for RF Switching applications and feature high breakdown voltages combined with the low on-resistance and off-state capacitance. This enables a dramatic increases in power handling. GaAs FET switches are widely used in the RF industry, and typically used for power levels on the order of a few watts or less. GaN FETs are able to use the same circuit architectures to handle power levels on the order of tens of watts.

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