YQx0汽车级肖特基势垒二极管

ROHM Semiconductor YQx0汽车级肖特基势垒二极管具有低正向电压、反向电流和电容，可靠性高。YQx0肖特基势垒二极符合AEC-Q101标准，管采用沟槽式MOS结构，结温为+150°C。应用包括汽车、开关电源、续流二极管和反极性保护。

结果: 5
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描述 数据表 供货情况 单价（含13%增值税） 根据您的数量，按照单价筛选表格中的结果。
数量 RoHS ECAD模型 产品
安装风格
封装 / 箱体
配置
技术
If - 正向电流
Vrrm - 重复反向电压
Vf - 正向电压
Ifsm - 正向浪涌电流
Ir - 反向电流
最大工作温度
封装
ROHM Semiconductor 肖特基二极管与整流器 Trench MOS Structure, 100V, 10A, TO-277A, Highly Efficient SBD for Automotive: The YQ10RSM10SDTF is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable opera
数据表
7,578库存量
最低： 1
倍数： 1
卷轴: 4,000

Schottky Diodes SMD/SMT TO-277A-3 Dual Anode Common Cathode Si 10 A 100 V 610 mV 200 A 80 uA + 175 C Reel, Cut Tape
ROHM Semiconductor 肖特基二极管与整流器 Trench MOS Structure, 100V, 20A, TO-263L, Highly Efficient SBD for Automotive: The YQ20NL10CDFH is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable operat
数据表
1,900库存量
MouseReel 提供服务支持
最低： 1
倍数： 1
卷轴: 1,000

Schottky Diodes SMD/SMT TO-263L-3 Dual Anode Common Cathode Si 20 A 100 V 650 mV 150 A 70 uA + 150 C Reel, Cut Tape, MouseReel
ROHM Semiconductor 肖特基二极管与整流器 Trench MOS Structure, 100V, 20A, TO-263L, Highly Efficient SBD for Automotive: The YQ20NL10SEFH is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable operat
数据表
2,000库存量
最低： 1
倍数： 1
卷轴: 1,000

Schottky Diodes SMD/SMT TO-263L-3 Single Si 20 A 100 V 790 mV 200 A 80 uA + 150 C Reel, Cut Tape
ROHM Semiconductor 肖特基二极管与整流器 Trench MOS Structure, 100V, 20A, TO-252, Highly Efficient SBD for Automotive: The YQ20BM10SDFH is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable operati
数据表
400库存量
最低： 1
倍数： 1
卷轴: 2,500

Schottky Diodes SMD/SMT TO-252-3 Single Si 20 A 100 V 790 mV 150 A 80 uA + 150 C Reel, Cut Tape
ROHM Semiconductor 肖特基二极管与整流器 Trench MOS Structure, 100V, 30A, TO-263L, Highly Efficient SBD for Automotive: The YQ30NL10SEFH is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable operat
数据表
1,280库存量
最低： 1
倍数： 1
卷轴: 1,000

Schottky Diodes SMD/SMT TO-263L-3 Single Si 30 A 100 V 780 mV 200 A 150 uA + 150 C Reel, Cut Tape