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肖特基二极管与整流器 Trench MOS Structure, 100V, 20A, TO-252, Highly Efficient SBD for Automotive: The YQ20BM10SDFH is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable operati
- YQ20BM10SDFHTL
- ROHM Semiconductor
-
1:
¥17.2099
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2,500库存量
-
5,000预期 2026/7/28
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Mouser 零件编号
755-YQ20BM10SDFHTL
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ROHM Semiconductor
|
肖特基二极管与整流器 Trench MOS Structure, 100V, 20A, TO-252, Highly Efficient SBD for Automotive: The YQ20BM10SDFH is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable operati
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2,500库存量
5,000预期 2026/7/28
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|
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¥17.2099
|
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¥10.9158
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¥7.684
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¥6.2602
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|
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¥5.1754
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查看
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¥5.6952
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¥5.1415
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最低: 1
倍数: 1
:
2,500
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Schottky Diodes
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SMD/SMT
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TO-252-3
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Single
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Si
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20 A
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100 V
|
790 mV
|
150 A
|
80 uA
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+ 150 C
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Reel, Cut Tape
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肖特基二极管与整流器 Trench MOS Structure, 100V, 10A, TO-277A, Highly Efficient SBD for Automotive: The YQ10RSM10SDTF is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable opera
- YQ10RSM10SDTFTL1
- ROHM Semiconductor
-
1:
¥18.6902
-
6,783库存量
|
Mouser 零件编号
755-YQ10RSM10SDTFTL1
|
ROHM Semiconductor
|
肖特基二极管与整流器 Trench MOS Structure, 100V, 10A, TO-277A, Highly Efficient SBD for Automotive: The YQ10RSM10SDTF is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable opera
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6,783库存量
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|
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¥18.6902
|
|
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¥11.9893
|
|
|
¥8.0795
|
|
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¥6.4297
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|
|
查看
|
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¥5.2884
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|
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¥5.8986
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|
|
¥5.5596
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|
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¥5.2884
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|
最低: 1
倍数: 1
:
4,000
|
|
|
Schottky Diodes
|
SMD/SMT
|
TO-277A-3
|
Dual Anode Common Cathode
|
Si
|
10 A
|
100 V
|
610 mV
|
200 A
|
80 uA
|
+ 175 C
|
Reel, Cut Tape
|
|
|
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肖特基二极管与整流器 Trench MOS Structure, 100V, 20A, TO-263L, Highly Efficient SBD for Automotive: The YQ20NL10CDFH is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable operat
- YQ20NL10CDFHTL
- ROHM Semiconductor
-
1:
¥28.6229
-
1,900库存量
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Mouser 零件编号
755-YQ20NL10CDFHTL
|
ROHM Semiconductor
|
肖特基二极管与整流器 Trench MOS Structure, 100V, 20A, TO-263L, Highly Efficient SBD for Automotive: The YQ20NL10CDFH is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable operat
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1,900库存量
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|
¥28.6229
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|
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¥18.6111
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¥12.9046
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|
|
¥10.509
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|
|
¥9.5937
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|
|
¥9.5146
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|
最低: 1
倍数: 1
:
1,000
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|
|
Schottky Diodes
|
SMD/SMT
|
TO-263L-3
|
Dual Anode Common Cathode
|
Si
|
20 A
|
100 V
|
650 mV
|
150 A
|
70 uA
|
+ 150 C
|
Reel, Cut Tape, MouseReel
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|
|
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肖特基二极管与整流器 Trench MOS Structure, 100V, 20A, TO-263L, Highly Efficient SBD for Automotive: The YQ20NL10SEFH is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable operat
- YQ20NL10SEFHTL
- ROHM Semiconductor
-
1:
¥25.312
-
2,000库存量
|
Mouser 零件编号
755-YQ20NL10SEFHTL
|
ROHM Semiconductor
|
肖特基二极管与整流器 Trench MOS Structure, 100V, 20A, TO-263L, Highly Efficient SBD for Automotive: The YQ20NL10SEFH is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable operat
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2,000库存量
|
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¥25.312
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¥16.2946
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¥11.2548
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|
|
¥9.0965
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|
|
¥8.4411
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¥8.136
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最低: 1
倍数: 1
:
1,000
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|
|
Schottky Diodes
|
SMD/SMT
|
TO-263L-3
|
Single
|
Si
|
20 A
|
100 V
|
790 mV
|
200 A
|
80 uA
|
+ 150 C
|
Reel, Cut Tape
|
|
|
|
肖特基二极管与整流器 Trench MOS Structure, 100V, 30A, TO-263L, Highly Efficient SBD for Automotive: The YQ30NL10SEFH is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable operat
- YQ30NL10SEFHTL
- ROHM Semiconductor
-
1:
¥27.8771
-
1,244库存量
|
Mouser 零件编号
755-YQ30NL10SEFHTL
|
ROHM Semiconductor
|
肖特基二极管与整流器 Trench MOS Structure, 100V, 30A, TO-263L, Highly Efficient SBD for Automotive: The YQ30NL10SEFH is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable operat
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1,244库存量
|
|
|
¥27.8771
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¥18.193
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|
¥12.5769
|
|
|
¥10.17
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|
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¥9.7632
|
|
|
¥9.1869
|
|
最低: 1
倍数: 1
:
1,000
|
|
|
Schottky Diodes
|
SMD/SMT
|
TO-263L-3
|
Single
|
Si
|
30 A
|
100 V
|
780 mV
|
200 A
|
150 uA
|
+ 150 C
|
Reel, Cut Tape
|
|