TGS2355

Qorvo
772-TGS2355
TGS2355

制造商：

说明：
RF 开关 IC .5-6GHz SPDT 100 Watt GaN

数据表:
ECAD模型:
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供货情况

库存：
无库存
生产周期：
12 周 预计工厂生产时间。
最少： 50   倍数： 50
单价:
¥-.--
总价:
¥-.--
预估关税:

定价 (含13% 增值税)

数量 单价
总价
¥1,109.9764 ¥55,498.82

备用包装

制造商零件编号:
TGS2355-SM
包装:
Tray
供货情况:
库存量
单价:
¥1,935.9273
最小:
1

产品属性 属性值 选择属性
Qorvo
产品种类: RF 开关 IC
RoHS:  
SPDT
500 MHz
6 GHz
1.3 dB
40 dB
- 55 C
+ 150 C
SMD/SMT
Die
Si
TGS2355
Gel Pack
商标: Qorvo
高控制电压: - 48 V
开关数量: Single
工作电源电流: 1 mA
Pd-功率耗散: 36.8 W
产品类型: RF Switch ICs
工厂包装数量: 50
子类别: Wireless & RF Integrated Circuits
零件号别名: 1097157
单位重量: 1 g
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已选择的属性: 0 

                        
Qorvo Die products:

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information.



5-0810-13

数据表

PCN

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CNHTS:
8542399000
CAHTS:
8542390000
USHTS:
8542390090
JPHTS:
854239099
TARIC:
8542399000
MXHTS:
8542399901
ECCN:
EAR99

TGS2355 High Power GaN Switch

Qorvo TGS2355 High Power GaN Switch is a single-pole, double-throw (SPDT) reflective switch fabricated on Qorvo's 00.25µm GaN (Gallium Nitride) on SiC (Silicon Carbide) production process (QGaN25). Operating from 0.5GHz to 6.0GHz, the TGS2355 provides up to 100W input power handling with <1dB insertion over most of the operating band and greater than 40dB isolation.

GaN Solutions

Qorvo is your smart RF partner for building solutions using Gallium Nitride (GaN) technology. No longer a technology just for defense and aerospace applications, GaN is enabling higher and higher frequencies in more complex applications, such as phased arrays, radar, base transceiver stations for 5G, cable TV (CATV), VSAT, and defense communications. Qorvo provides proven, record-setting GaN circuit reliability and compact, high-efficiency products. This paves the way for more robust performance, lower operating costs and longer operational lifetimes.

GaN Switches

Qorvo Gallium Nitride (GaN) Switches are suited for RF Switching applications and feature high breakdown voltages combined with the low on-resistance and off-state capacitance. This enables a dramatic increases in power handling. GaAs FET switches are widely used in the RF industry, and typically used for power levels on the order of a few watts or less. GaN FETs are able to use the same circuit architectures to handle power levels on the order of tens of watts.

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