3N163 P-Channel Enhancement Mode MOSFETs

Linear Integrated Systems 3N163 P-Channel Enhancement Mode MOSFETs feature high input impedance, high gate breakdown, ultra-low leakage, and low capacitance. These MOSFETs offer -40V drain-source or drain-gate voltage, 50mA drain current, and 375mW (TO-72 case), and 350mW (SOT-143 case) power dissipation. The 3N163 P-Channel MOSFETs are available in the TO-72 RoHS, SOT-143 RoHS package, and as bare die. These MOSFETs are ideal for amplifier and switching applications.

结果: 4
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描述 数据表 供货情况 单价（含13%增值税） 根据您的数量，按照单价筛选表格中的结果。
数量 RoHS ECAD模型 技术
安装风格
封装 / 箱体
晶体管极性
通道数量
Vds-漏源极击穿电压
Id-连续漏极电流
Rds On-漏源导通电阻
Vgs - 栅极-源极电压
Vgs th-栅源极阈值电压
Pd-功率耗散
通道模式
封装
Linear Integrated Systems MOSFET SINGLE, P-CHANNEL ENHANCEMENT MODE MOSFET
数据表
631库存量
最低： 1
倍数： 1

Si Through Hole TO-72-4 P-Channel 1 Channel 40 V 30 mA 250 Ohms - 6.5 V, 6.5 V 5 V 350 mW, 375 mW Enhancement Bulk
Linear Integrated Systems MOSFET SINGLE, P-CHANNEL ENHANCEMENT MODE MOSFET
数据表
Si SMD/SMT SOT-143-4 P-Channel 1 Channel 40 V 30 mA 250 Ohms - 6.5 V, 6.5 V 5 V 350 mW, 375 mW Enhancement Reel
Linear Integrated Systems MOSFET SINGLE, P-CHANNEL ENHANCEMENT MODE MOSFET
数据表
Si SMD/SMT SOT-143-4 P-Channel 1 Channel 40 V 30 mA 250 Ohms - 6.5 V, 6.5 V 5 V 350 mW, 375 mW Enhancement Reel
Linear Integrated Systems MOSFET SINGLE, P-CHANNEL ENHANCEMENT MODE MOSFET
数据表

Si SMD/SMT SOT-143-4 P-Channel 1 Channel 40 V 30 mA 250 Ohms - 6.5 V, 6.5 V 5 V 350 mW, 375 mW Enhancement