Power MOSFETs

Diodes Incorporated offers a broad range of Power MOSFETs, enabling designers to select a device optimized for their end application, thus enabling next generation consumer, computer and communication product designs. The Diodes portfolio is ideally suited to meeting the circuit requirements of DC-DC conversion, load switching, motor control, backlighting, battery protection, battery chargers, audio circuits, and automotive applications.

结果: 1,447
选择 图像 零件编号 制造商 描述 数据表 供货情况 单价(含13%增值税) 根据您的数量,按照单价筛选表格中的结果。 数量 RoHS
Diodes Incorporated MOSFET MOSFET BVDSS: 61V~100V U-DFN2020-6 T&R 3K
18,865在途量
最低: 1
倍数: 1
: 3,000

Diodes Incorporated MOSFET MOSFET BVDSS 61V-100V
10,000在途量
最低: 1
倍数: 1
最大: 560
: 2,000

Diodes Incorporated MOSFET MOSFET BVDSS: 8V~24V SO-8 T&R 2.5K
46,030预期 2026/8/28
最低: 1
倍数: 1
最大: 1,470
: 2,500

Diodes Incorporated MOSFET MOSFET BVDSS: 41V-60V
12,200预期 2027/3/19
最低: 1
倍数: 1
: 3,000

Diodes Incorporated MOSFET 60V N-Ch Enh Mode 22Vgss 2090pF 41.3nC
5,998在途量
最低: 1
倍数: 1
: 3,000

Diodes Incorporated MOSFET 60V N-Ch Enh FET 16mOhm 10Vgs 8.9A
36,000在途量
最低: 1
倍数: 1
: 3,000

Diodes Incorporated MOSFET MOSFET BVDSS: 41V~60V U-DFN2020-6 T&R 3K
26,966在途量
最低: 1
倍数: 1
: 3,000

Diodes Incorporated MOSFET MOSFET BVDSS: 31V~40V U-DFN2020-6 T&R 10K
10,000预期 2026/10/14
最低: 1
倍数: 1
最大: 340
: 10,000

Diodes Incorporated MOSFET MOSFET BVDSS: 41V-60V
4,990预期 2027/1/15
最低: 1
倍数: 1
: 2,500

Diodes Incorporated MOSFET 60V N-Ch Enh FET 20Vgs 80mOhm
5,919预期 2027/3/12
最低: 1
倍数: 1
: 3,000


Diodes Incorporated MOSFET MOSFET BVDSS: 41V~60V SOT223 T&R 1K
2,000在途量
最低: 1
倍数: 1
: 1,000


Diodes Incorporated MOSFET Low Side IntelliFET
16,520在途量
最低: 1
倍数: 1
最大: 1,410
: 2,500


Diodes Incorporated MOSFET MOSFET,N-CHANNEL 60V, 4.1A/- 5.0A
2,490预期 2027/3/19
最低: 1
倍数: 1
: 2,500


Diodes Incorporated MOSFET Dual N-Ch 60V 8ohm 5V VGS 170mA
22,590预期 2026/7/21
最低: 1
倍数: 1
: 3,000


Diodes Incorporated MOSFET Dl 60V N-Chnl UMOS
2,000在途量
最低: 1
倍数: 1
最大: 290
: 500


Diodes Incorporated MOSFET Dl 60V N-Chnl UMOS
1,500预期 2026/8/19
最低: 1
倍数: 1
: 500


Diodes Incorporated MOSFET 2N7002 Family
40,000在途量
最低: 1
倍数: 1
最大: 2,030
: 10,000


Diodes Incorporated MOSFET MOSFET BVDSS:
24,013预期 2027/3/19
最低: 1
倍数: 1
最大: 1,290
: 3,000

Diodes Incorporated MOSFET P-Ch -50V Enh FET 10Ohm -5Vgs -130mA
51,000预期 2027/2/5
最低: 1
倍数: 1
最大: 6,000
: 3,000

Diodes Incorporated MOSFET MOSFET BVDSS: 8V~24V U-DFN2020-6 T&R 3K
2,979预期 2027/3/5
最低: 1
倍数: 1
: 3,000

Diodes Incorporated MOSFET Comp Pair Enh FET 20Vdss 12Vgss 0.45W
8,967在途量
最低: 1
倍数: 1
最大: 1,830
: 3,000


Diodes Incorporated MOSFET MOSFET BVDSS: 8V~24V SOT363 T&R 3K
25,355在途量
最低: 1
倍数: 1
: 3,000


Diodes Incorporated MOSFET 30V N & P Comp FET Enh 2.3Vgs 25nC 22nC
4,997预期 2026/8/19
最低: 1
倍数: 1
: 2,500

Diodes Incorporated MOSFET MOSFET BVDSS
4,000在途量
最低: 1
倍数: 1
: 2,000


Diodes Incorporated MOSFET 30V N-Ch Enh Mode 50mOhm 10V 3.6A
18,794在途量
最低: 1
倍数: 1
最大: 1,290
: 3,000