iS20M028S1C SuperQ™ 200V N-Ch Power MOSFETs

iDEAL Semi iS20M028S1C SuperQ™ 200V N-Ch Power MOSFETs are designed for SMPS and high-efficiency motor drives. The 200V MOSFETs feature ultra-low conduction and switching losses in a robust PDFN package measuring 5mm x 6mm. The iDEAL Semi iS20M028S1C SuperQ 200V N-Ch Power MOSFETs supply superior RDS(on) and QSW, while minimizing heat dissipation at both full and partial loads.

结果: 5
选择 图像 零件编号 制造商 描述 数据表 供货情况 单价(含13%增值税) 根据您的数量,按照单价筛选表格中的结果。 数量 RoHS ECAD模型 技术 安装风格 封装 / 箱体 晶体管极性 通道数量 Vds-漏源极击穿电压 Id-连续漏极电流 Rds On-漏源导通电阻 Vgs - 栅极-源极电压 Vgs th-栅源极阈值电压 Qg-栅极电荷 最小工作温度 最大工作温度 Pd-功率耗散 通道模式 商标名 封装
iDEAL Semiconductor MOSFET SuperQ power MOSFET 200 V, 25m? max, normal threshold level in TO-220 package 2,102库存量
最低: 1
倍数: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 200 V 40 A 25 mOhms 20 V 4.1 V 26.5 nC - 55 C + 175 C 100 W Enhancement SuperQ Tube
iDEAL Semiconductor MOSFET 203库存量
最低: 1
倍数: 1
卷轴: 100

Si SMD/SMT PDFN-8 N-Channel 1 Channel 200 V 45 A 25 mOhms 20 V 4.1 V 27.5 nC - 55 C + 175 C 125 W Enhancement SuperQ Reel, Cut Tape
iDEAL Semiconductor MOSFET

Si SMD/SMT PDFN-8 N-Channel 1 Channel 200 V 45 A 25 mOhms 20 V 4.1 V 27.5 nC - 55 C + 175 C 125 W Enhancement SuperQ Reel, Cut Tape
iDEAL Semiconductor MOSFET SuperQ MOSFET 200 V, 5.5m max, normal threshold level in TOLL package

Si SMD/SMT TOLL-8 N-Channel 1 Channel 200 V 151 A 5.5 mOhms 20 V 4.1 V 112 nC - 55 C + 175 C 314 W Enhancement SuperQ Bulk
iDEAL Semiconductor MOSFET SuperQ MOSFET 200 V, 5.5m max, normal threshold level in TOLL package

Si SMD/SMT TOLL-8 N-Channel 1 Channel 200 V 151 A 5.5 mOhms 20 V 4.1 V 112 nC - 55 C + 175 C 314 W Enhancement SuperQ Reel