Photodiodes

Advanced Photonix delivers a comprehensive portfolio of high-performance photodiodes and optical sensors engineered for precision detection across ultraviolet, visible, and near-infrared wavelengths. These devices are trusted across aerospace and defense, medical and life sciences, industrial, and test and measurement markets.

结果: 135
选择 图像 零件编号 制造商 描述 数据表 供货情况 单价(含13%增值税) 根据您的数量,按照单价筛选表格中的结果。 数量 RoHS ECAD模型 产品 封装 / 箱体 安装风格 峰值波长 暗电流 Vr - 反向电压 上升时间 下降时间 半强度角度 最小工作温度 最大工作温度 系列
Advanced Photonix 光电二极管 2.5Gbps InGaAs Hybrid TO-46

Photodiodes TO-46 Through Hole 1650 nm - 40 C + 85 C
Advanced Photonix 光电二极管
Photodiodes TO-46 Through Hole 1650 nm - 40 C + 85 C
Advanced Photonix 光电二极管 1x1 mm human eye response silicon photodiode

Photodiodes TO-18 SMD/SMT 200 pA 15 VDC - 25 C + 85 C OSD-E
Advanced Photonix 光电二极管 5.8x5.9 mm fully depleted, high energy radiation silicon photodiode

Photodiodes - 25 C + 75 C OSD35-LR
Advanced Photonix 光电二极管 2.5 mm diameter human eye response silicon photodiode

Photodiodes TO-5 SMD/SMT 500 pA 15 VDC - 25 C + 85 C OSD-E
Advanced Photonix 光电二极管 100 mm sq. human eye response silicon photodiode

Photodiodes TO-8 SMD/SMT 8 nA 15 VDC - 25 C + 85 C OSD-E
Advanced Photonix 光电二极管 Silicon Photodiode

PIN Photodiodes TO-5 Through Hole 1100 nm 500 pA 100 V 15 ns 15 ns - 55 C + 150 C
Advanced Photonix 光电二极管

Photodiodes Wire 1100 nm 30 nA 50 V 30 ns 30 ns - 40 C + 100 C
Advanced Photonix 光电二极管 4x4 element two dimensional array silicon photodiode

Photodiodes LCC SMD/SMT 850 nm - 20 C + 60 C 4X4 Array Detectors
Advanced Photonix 光电二极管 10x10 mm fully depleted, high energy radiation photodetector

Photodiodes Ceramic-25 Through Hole 950 nm 2 nA 120 V 40 ns - 20 C + 60 C Lg Active HIghSpeed
Advanced Photonix 光电二极管 3 mm diameter fully depleted, high energy radiation photodetector

Photodiodes TO-8 Through Hole 900 nm 0.2 nA 135 V 1.5 ns - 40 C + 100 C Lg Active HIghSpeed
Advanced Photonix 光电二极管 10x10 mm fully depleted, high energy radiation photodetector, low bias

Photodiodes Ceramic-25 Through Hole 950 nm 2 nA 70 V 6 ns - 20 C + 60 C Lg Active HIghSpeed
Advanced Photonix 光电二极管 15 mm sq. fully depleted, high energy radiation photodetector

Photodiodes TO-8 Through Hole 900 nm 1 nA 140 V 3 ns - 40 C + 100 C Lg Active HIghSpeed
Advanced Photonix 光电二极管 9.7x9.7 mm active area low noise solderable photodiode chip

Photodiodes 970 nm Solderable Chip
Advanced Photonix 光电二极管 2.3x4.2 mm active area low noise solderable photodiode chip

Photodiodes 970 nm Solderable Chip
Advanced Photonix 光电二极管 4.5x23.5 mm active area low noise solderable photodiode chip

Photodiodes 970 nm Solderable Chip
Advanced Photonix 光电二极管 10x10mm Silicon TetraLateral

Photodiodes TO-5-3 Through Hole 670 nm 250 nA 1 us 0 C + 70 C
Advanced Photonix 光电二极管 18.8x18.8 mm active area tetra lateral position sensing detector

Photodiodes 1 uA 5 us 0 C + 70 C Two-Dimensional
Advanced Photonix 光电二极管

Photodiodes TO-46-2 Through Hole 0.2 nA 20 V - 40 C + 100 C
Advanced Photonix 光电二极管

Photodiodes TO-46 900 nm to 1700 nm 0.5 nA 20 V - 40 C + 100 C
Advanced Photonix 光电二极管

Photodiodes 1210 SMD/SMT 0.5 nA 20 V 65 deg - 40 C + 100 C
Advanced Photonix 光电二极管 1.3x1.3 mm quadrant UV-Enhanced silicon photodiode

Photodiodes 5 V 10 us - 10 C + 60 C SPOT
Advanced Photonix 光电二极管 10mm dia Quadrant Si w/ hole

Photodiodes Through Hole 10 nA 30 V 6 ns - 20 C + 60 C
Advanced Photonix 光电二极管

Photodiodes TO-5 0 C + 70 C
Advanced Photonix 光电二极管 5.7mm sq UV Si Photodiode Ceramic

Photodiodes Ceramic-25 Through Hole 980 nm 1 us - 20 C + 60 C