30V Single N-Channel Power MOSFETs

Taiwan Semiconductor 30V Single N-Channel Power MOSFETs feature a low RDS(ON) (drain-source on-state resistance), which minimizes conductive losses. These devices also feature a low gate charge for fast switching. These N-Channel Power MOSFETs are ideal for battery power management, load switching, motor control, and DC-DC converter applications.

结果: 3
选择 图像 零件编号 制造商 描述 数据表 供货情况 单价(含13%增值税) 根据您的数量,按照单价筛选表格中的结果。 数量 RoHS ECAD模型 技术 安装风格 封装 / 箱体 晶体管极性 通道数量 Vds-漏源极击穿电压 Id-连续漏极电流 Rds On-漏源导通电阻 Vgs - 栅极-源极电压 Vgs th-栅源极阈值电压 Qg-栅极电荷 最小工作温度 最大工作温度 Pd-功率耗散 通道模式 封装
Taiwan Semiconductor MOSFET 30V, 194A, Single N-Channel Power MOSFET 956库存量
最低: 1
倍数: 1
卷轴: 2,500

Si SMD/SMT PDFN-56-8 N-Channel 1 Channel 30 V 194 A 1.8 mOhms - 20 V, 20 V 2.5 V 120 nC - 55 C + 175 C 136 W Enhancement Reel, Cut Tape, MouseReel
Taiwan Semiconductor MOSFET 30V, 90A, Single N-Channel Power MOSFET 2,489库存量
最低: 1
倍数: 1
卷轴: 2,500

Si SMD/SMT PDFN-56-8 N-Channel 1 Channel 30 V 90 A 5.2 mOhms - 20 V, 20 V 2.5 V 41 nC - 55 C + 175 C 83 W Enhancement Reel, Cut Tape, MouseReel
Taiwan Semiconductor MOSFET 30V, 59A, Single N-Channel Power MOSFET 2,439库存量
最低: 1
倍数: 1
卷轴: 2,500

Si SMD/SMT PDFN-56-8 N-Channel 1 Channel 30 V 59 A 8 mOhms - 20 V, 20 V 2.5 V 20 nC - 55 C + 175 C 55.6 W Enhancement Reel, Cut Tape, MouseReel