MMBT3904T RSG

Taiwan Semiconductor
821-MMBT3904TRSG
MMBT3904T RSG

制造商:

说明:
双极晶体管 - 双极结型晶体管(BJT) 60V, 0.2A, NPN Bipolar Transistor

ECAD模型:
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库存量: 5,709

库存:
5,709 可立即发货
生产周期:
18 周 大于所示数量的预计工厂生产时间。
最少: 1   倍数: 1
单价:
¥-.--
总价:
¥-.--
预估关税:

定价 (含13% 增值税)

数量 单价
总价
¥1.7402 ¥1.74
¥1.04186 ¥10.42
¥0.65314 ¥65.31
¥0.48025 ¥240.13
¥0.42149 ¥421.49
整卷卷轴(请按3000的倍数订购)
¥0.339 ¥1,017.00
¥0.30623 ¥1,837.38
¥0.2486 ¥2,237.40
¥0.23956 ¥5,749.44

产品属性 属性值 选择属性
Taiwan Semiconductor
产品种类: 双极晶体管 - 双极结型晶体管(BJT)
RoHS:  
Si
SMD/SMT
SOT-523-3
NPN
Single
200 mA
40 V
60 V
6 V
300 mV
150 mW
- 55 C
+ 150 C
Reel
Cut Tape
商标: Taiwan Semiconductor
集电极连续电流: 200 mA
直流集电极/Base Gain hfe Min: 30
直流电流增益 hFE 最大值: 300
产品类型: BJTs - Bipolar Transistors
工厂包装数量: 3000
子类别: Transistors
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已选择的属性: 0

CAHTS:
8541210000
USHTS:
8541210075
JPHTS:
854121000
KRHTS:
8541219000
TARIC:
8541210000
MXHTS:
8541210100
ECCN:
EAR99

MMBT3904T NPN Bipolar Transistor

Taiwan Semiconductor MMBT3904T NPN Bipolar Transistor is an epitaxial planar type transistor with improved electrical conductivity. This transistor is designed with 60V of collector-to-base voltage (VCBO), 40V of collector-to-emitter voltage (VCEO), and 6V of emitter-to-base voltage (VEBO). The MMBT3904T NPN transistor features a collector current of 200mA and a power dissipation (PD) of 150mW. This transistor is halogen-free according to IEC 61249-2-21 standards and RoHS compliant. Some of the applications include consumer electronics, low-frequency amplifiers, and drivers.