650V CoolMOS™ CFD7 SJ功率MOSFET

英飞凌科技650V CoolMOS™ CFD7 SJ功率MOSFET是超快二极管,扩展了CFD7系列的电压等级产品。该功率MOSFET具有额外的50V击穿电压、集成快速体二极管、改进的开关性能以及出色的散热性能。这些CFD7功率MOSFET在LLC和相移全桥 (ZVS) 等谐振开关拓扑中提供最高效率。这些MOSFET将快速开关技术的所有优势与出色的硬计算稳健性结合在一起。这些功率MOSFET支持符合可靠性标准的CoolMOS™ CFD7技术,进一步支持高功率密度解决方案。

结果: 14
选择 图像 零件编号 制造商 描述 数据表 供货情况 单价(含13%增值税) 根据您的数量,按照单价筛选表格中的结果。 数量 RoHS ECAD模型 技术 安装风格 封装 / 箱体 晶体管极性 通道数量 Vds-漏源极击穿电压 Id-连续漏极电流 Rds On-漏源导通电阻 Vgs - 栅极-源极电压 Vgs th-栅源极阈值电压 Qg-栅极电荷 最小工作温度 最大工作温度 Pd-功率耗散 通道模式 商标名 封装
Infineon Technologies MOSFET HIGH POWER_NEW 1,155库存量
剪切带
¥85.7783
¥47.6408
¥44.9175
卷轴
¥42.4315
最低: 1
倍数: 1
: 1,000
Si SMD/SMT D2PAK-2 (TO-263-2) N-Channel 1 Channel 700 V 50 A 41 mOhms 20 V 4.5 V 102 nC - 55 C + 150 C 227 W Enhancement Reel, Cut Tape, MouseReel

Infineon Technologies MOSFET HIGH POWER_NEW 268库存量
¥75.936
¥44.748
¥37.7194
¥36.5555
¥35.482
最低: 1
倍数: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 36 A 60 mOhms 10 V 3.5 V 68 nC - 55 C + 150 C 171 W Enhancement Tube

Infineon Technologies MOSFET HIGH POWER_NEW 126库存量
¥98.5134
¥67.1672
¥65.427
最低: 1
倍数: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 700 V 69 A 29 mOhms 20 V 4.5 V 145 nC - 55 C + 150 C 305 W Enhancement Tube
Infineon Technologies MOSFET HIGH POWER_NEW 300库存量
¥81.8007
¥50.4545
¥43.7536
¥39.211
最低: 1
倍数: 1
Si Through Hole N-Channel 1 Channel 650 V 50 A 41 mOhms 20 V 4.5 V 102 nC - 55 C + 150 C 227 W Enhancement Tube
Infineon Technologies MOSFET 650V CoolMOS CFD7 SJ Power Device 675库存量
剪切带
¥163.285
¥103.2255
¥97.6885
卷轴
¥97.6885
最低: 1
倍数: 1
: 750
Si CoolMOS Reel, Cut Tape
Infineon Technologies MOSFET 650V CoolMOS CFD7 SJ Power Device 675库存量
剪切带
¥89.4169
¥49.7087
¥47.3131
¥44.6689
卷轴
¥44.6689
最低: 1
倍数: 1
: 750
Si CoolMOS Reel, Cut Tape
Infineon Technologies MOSFET HIGH POWER_NEW 1,118库存量
剪切带
¥41.8552
¥27.3799
¥20.4304
¥17.1195
卷轴
¥16.2946
¥14.9725
最低: 1
倍数: 1
: 1,000
Si SMD/SMT N-Channel 1 Channel 700 V 15 A 155 mOhms 20 V 4.5 V 28 nC - 55 C + 150 C 77 W Enhancement Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET HIGH POWER_NEW 808库存量
剪切带
¥55.7542
¥29.6173
¥27.1313
¥25.312
卷轴
¥23.8995
最低: 1
倍数: 1
: 1,000
Si SMD/SMT D2PAK-2 (TO-263-2) N-Channel 1 Channel 650 V 25 A 90 mOhms 20 V 4.5 V 53 nC - 55 C + 150 C 127 W Enhancement Reel, Cut Tape

Infineon Technologies MOSFET HIGH POWER_NEW 287库存量
720在途量
¥90.4113
¥49.2115
¥45.5729
¥45.3243
最低: 1
倍数: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 700 V 68.5 A 41 mOhms 20 V 4 V 102 nC - 55 C + 150 C 500 W Enhancement Tube
Infineon Technologies MOSFET HIGH POWER_NEW 181库存量
¥124.5712
¥70.1391
¥68.9074
最低: 1
倍数: 1
Si Through Hole TO-247-4 N-Channel 1 Channel 650 V 69 A 29 mOhms 20 V 4.5 V 145 nC - 55 C + 150 C 305 W Enhancement Tube
Infineon Technologies MOSFET HIGH POWER_NEW 71库存量
500预期 2026/12/10
¥67.0881
¥36.2278
¥33.2559
¥30.5213
最低: 1
倍数: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 36 A 60 mOhms 10 V 4.5 V 68 nC - 55 C + 150 C 171 W Enhancement Tube
Infineon Technologies MOSFET HIGH POWER_NEW 40库存量
¥175.5229
¥123.2491
¥110.2654
最低: 1
倍数: 1
Si Through Hole TO-247-4 N-Channel 1 Channel 700 V 106 A 18 mOhms 20 V 4.5 V 234 nC - 55 C + 150 C 446 W Enhancement Tube
Infineon Technologies MOSFET AUTOMOTIVE_COOLMOS 无库存交货期 52 周
¥124.4017
¥70.5572
¥65.5965
¥63.9354
最低: 1
倍数: 1
Si Through Hole TO-247-4 N-Channel 1 Channel 650 V 63 A 35 mOhms 20 V 4.5 V 145 nC - 40 C + 150 C 305 W Enhancement Tube

Infineon Technologies MOSFET HIGH POWER_NEW 无库存交货期 19 周
¥63.4382
¥33.6627
¥30.9394
¥26.3855
最低: 1
倍数: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 25 A 90 mOhms 20 V 4.5 V 53 nC - 55 C + 150 C 127 W Enhancement Tube