|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 720-960 MHz 100 W AVG. 48 V
NXP Semiconductors AFV09P350-04NR3
- AFV09P350-04NR3
- NXP Semiconductors
-
1:
¥1,502.787
-
244库存量
|
Mouser 零件编号
841-AFV09P350-04NR3
|
NXP Semiconductors
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 720-960 MHz 100 W AVG. 48 V
|
|
244库存量
|
|
|
¥1,502.787
|
|
|
¥1,265.8825
|
|
|
¥1,206.501
|
|
|
¥1,170.8495
|
|
|
查看
|
|
|
¥960.5791
|
|
|
¥960.6582
|
|
|
¥960.5791
|
|
|
报价
|
|
最低: 1
倍数: 1
|
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 MV9 800MHZ 13.6V
- AFT09MS031NR1
- NXP Semiconductors
-
1:
¥196.0324
-
487库存量
|
Mouser 零件编号
841-AFT09MS031NR1
|
NXP Semiconductors
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 MV9 800MHZ 13.6V
|
|
487库存量
|
|
|
¥196.0324
|
|
|
¥156.3355
|
|
|
¥146.4028
|
|
|
¥115.7233
|
|
|
查看
|
|
|
¥114.1526
|
|
|
¥114.4803
|
|
|
¥114.1526
|
|
|
报价
|
|
最低: 1
倍数: 1
|
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 Wideband Airfast RF Power LDMOS Transistor 136-941 MHz, 6.0 W, 7.5 V
- AFM906NT1
- NXP Semiconductors
-
1:
¥30.6908
-
1,038库存量
|
Mouser 零件编号
841-AFM906NT1
|
NXP Semiconductors
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 Wideband Airfast RF Power LDMOS Transistor 136-941 MHz, 6.0 W, 7.5 V
|
|
1,038库存量
|
|
|
¥30.6908
|
|
|
¥23.0746
|
|
|
¥21.1762
|
|
|
¥19.1083
|
|
|
查看
|
|
|
¥15.142
|
|
|
¥18.9388
|
|
|
¥18.2834
|
|
|
¥15.142
|
|
最低: 1
倍数: 1
|
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 Wideband RF Power LDMOS Transistors, 1.8-500 MHz, 1500 W CW, 50 V
- MRF1K50NR5
- NXP Semiconductors
-
1:
¥3,227.5738
-
41库存量
|
Mouser 零件编号
841-MRF1K50NR5
|
NXP Semiconductors
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 Wideband RF Power LDMOS Transistors, 1.8-500 MHz, 1500 W CW, 50 V
|
|
41库存量
|
|
|
¥3,227.5738
|
|
|
¥2,784.4669
|
|
|
¥2,674.5405
|
|
|
¥2,605.6331
|
|
|
查看
|
|
|
报价
|
|
最低: 1
倍数: 1
|
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 LATERAL N--CHANNEL RF POWER LDMOS TRANSISTOR, 1-2000 MHz, 4 W, 28 V
- MMRF1014NT1
- NXP Semiconductors
-
1:
¥191.1621
-
584库存量
|
Mouser 零件编号
841-MMRF1014NT1
|
NXP Semiconductors
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 LATERAL N--CHANNEL RF POWER LDMOS TRANSISTOR, 1-2000 MHz, 4 W, 28 V
|
|
584库存量
|
|
|
¥191.1621
|
|
|
¥152.3579
|
|
|
¥142.6851
|
|
|
¥132.097
|
|
|
查看
|
|
|
¥121.0117
|
|
|
¥126.9668
|
|
|
¥123.9045
|
|
|
¥121.0117
|
|
|
报价
|
|
最低: 1
倍数: 1
|
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 Wideband RF Power LDMOS Transistor, 1800 W CW over 1.8-400 MHz, 65 V
- MRFX1K80GNR5
- NXP Semiconductors
-
1:
¥2,757.5051
-
5库存量
|
Mouser 零件编号
771-MRFX1K80GNR5
|
NXP Semiconductors
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 Wideband RF Power LDMOS Transistor, 1800 W CW over 1.8-400 MHz, 65 V
|
|
5库存量
|
|
|
¥2,757.5051
|
|
|
¥2,376.6838
|
|
|
¥2,281.6395
|
|
|
¥2,224.3146
|
|
|
查看
|
|
|
报价
|
|
最低: 1
倍数: 1
|
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 MV9 75W 12.5V TO270WB4G
- AFT05MP075GNR1
- NXP Semiconductors
-
1:
¥318.7843
-
313库存量
|
Mouser 零件编号
841-AFT05MP075GNR1
|
NXP Semiconductors
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 MV9 75W 12.5V TO270WB4G
|
|
313库存量
|
|
|
¥318.7843
|
|
|
¥258.1598
|
|
|
¥242.7692
|
|
|
¥226.226
|
|
|
查看
|
|
|
¥199.5128
|
|
|
¥218.2821
|
|
|
¥199.5128
|
|
|
报价
|
|
最低: 1
倍数: 1
|
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 Wideband RF Power LDMOS Transistor, 100 W CW over 1.8-250 MHz, 50 V
- MRF101AN
- NXP Semiconductors
-
1:
¥415.2298
-
3,618库存量
|
Mouser 零件编号
771-MRF101AN
|
NXP Semiconductors
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 Wideband RF Power LDMOS Transistor, 100 W CW over 1.8-250 MHz, 50 V
|
|
3,618库存量
|
|
|
¥415.2298
|
|
|
¥339.5537
|
|
|
¥299.4274
|
|
|
¥286.2855
|
|
|
查看
|
|
|
¥278.4207
|
|
|
报价
|
|
最低: 1
倍数: 1
|
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF Power LDMOS Transistor, 300 W CW over 1.8-250 MHz, 50 V
- MRF300AN
- NXP Semiconductors
-
1:
¥865.2184
-
370库存量
|
Mouser 零件编号
771-MRF300AN
|
NXP Semiconductors
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF Power LDMOS Transistor, 300 W CW over 1.8-250 MHz, 50 V
|
|
370库存量
|
|
|
¥865.2184
|
|
|
¥720.7818
|
|
|
¥678.6554
|
|
|
¥640.8795
|
|
|
查看
|
|
|
报价
|
|
最低: 1
倍数: 1
|
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 65V LDMOS Transistor
- MRFX1K80HR5
- NXP Semiconductors
-
1:
¥3,788.4719
-
65库存量
|
Mouser 零件编号
771-MRFX1K80HR5
|
NXP Semiconductors
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 65V LDMOS Transistor
|
|
65库存量
|
|
|
¥3,788.4719
|
|
|
¥3,283.2489
|
|
|
¥3,157.1861
|
|
|
¥3,081.2501
|
|
|
查看
|
|
|
报价
|
|
最低: 1
倍数: 1
|
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 Wideband RF Power LDMOS Transistor, 136-941 MHz, 4 W, 7.5 V
- AFT05MS004NT1
- NXP Semiconductors
-
1:
¥35.3238
-
8,571库存量
|
Mouser 零件编号
841-AFT05MS004NT1
|
NXP Semiconductors
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 Wideband RF Power LDMOS Transistor, 136-941 MHz, 4 W, 7.5 V
|
|
8,571库存量
|
|
|
¥35.3238
|
|
|
¥26.6341
|
|
|
¥24.4871
|
|
|
¥22.0802
|
|
|
查看
|
|
|
¥18.8597
|
|
|
¥20.9276
|
|
|
¥20.2609
|
|
|
¥18.8597
|
|
最低: 1
倍数: 1
|
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 LANDMOBILE 7W PLD1.5W
- AFT09MS007NT1
- NXP Semiconductors
-
1:
¥100.4005
-
5,633库存量
|
Mouser 零件编号
841-AFT09MS007NT1
|
NXP Semiconductors
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 LANDMOBILE 7W PLD1.5W
|
|
5,633库存量
|
|
|
¥100.4005
|
|
|
¥77.7327
|
|
|
¥72.094
|
|
|
¥65.8338
|
|
|
查看
|
|
|
¥59.4945
|
|
|
¥62.8845
|
|
|
¥61.0539
|
|
|
¥59.4945
|
|
|
报价
|
|
最低: 1
倍数: 1
|
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 Airfast RF Power LDMOS Transistor, 1500 W CW, 1.8-500 MHz, 50 V
- MRF1K50HR5
- NXP Semiconductors
-
1:
¥3,696.2526
-
46库存量
|
Mouser 零件编号
841-MRF1K50HR5
|
NXP Semiconductors
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 Airfast RF Power LDMOS Transistor, 1500 W CW, 1.8-500 MHz, 50 V
|
|
46库存量
|
|
|
¥3,696.2526
|
|
|
¥3,201.4369
|
|
|
¥3,077.9505
|
|
|
¥3,003.4157
|
|
|
查看
|
|
|
报价
|
|
最低: 1
倍数: 1
|
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 HV6E 60W TO270-2N FET
- MRFE6S9060NR1
- NXP Semiconductors
-
1:
¥883.66
-
535库存量
|
Mouser 零件编号
841-MRFE6S9060NR1
|
NXP Semiconductors
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 HV6E 60W TO270-2N FET
|
|
535库存量
|
|
|
¥883.66
|
|
|
¥737.5736
|
|
|
¥701.0972
|
|
|
¥661.1517
|
|
|
查看
|
|
|
¥660.7336
|
|
|
¥660.9822
|
|
|
¥660.7336
|
|
|
报价
|
|
最低: 1
倍数: 1
|
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 VHV6 300W50VISM NI780H-4
- MRFE6VP6300HR5
- NXP Semiconductors
-
1:
¥4,486.5181
-
527库存量
|
Mouser 零件编号
841-MRFE6VP6300HR5
|
NXP Semiconductors
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 VHV6 300W50VISM NI780H-4
|
|
527库存量
|
|
|
¥4,486.5181
|
|
|
¥3,911.0656
|
|
|
¥3,861.436
|
|
|
¥3,680.7829
|
|
|
报价
|
|
|
报价
|
|
最低: 1
倍数: 1
|
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 65V LDMOS 1800W CW 1.8-400MHz
- MRFX1K80NR5
- NXP Semiconductors
-
1:
¥3,186.8825
-
21库存量
|
Mouser 零件编号
771-MRFX1K80NR5
|
NXP Semiconductors
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 65V LDMOS 1800W CW 1.8-400MHz
|
|
21库存量
|
|
|
¥3,186.8825
|
|
|
¥2,750.4765
|
|
|
¥2,641.6236
|
|
|
¥2,400.5833
|
|
|
查看
|
|
|
报价
|
|
最低: 1
倍数: 1
|
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 MV9 75W 12.5V TO270WB4
- AFT05MP075NR1
- NXP Semiconductors
-
1:
¥405.8056
-
175库存量
|
Mouser 零件编号
841-AFT05MP075NR1
|
NXP Semiconductors
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 MV9 75W 12.5V TO270WB4
|
|
175库存量
|
|
|
¥405.8056
|
|
|
¥331.2821
|
|
|
¥312.671
|
|
|
¥292.2406
|
|
|
查看
|
|
|
¥276.6014
|
|
|
¥288.263
|
|
|
¥276.6014
|
|
|
报价
|
|
最低: 1
倍数: 1
|
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 MV9 UHF 13.6V
- AFT05MS031GNR1
- NXP Semiconductors
-
1:
¥301.9925
-
457库存量
|
Mouser 零件编号
841-AFT05MS031GNR1
|
NXP Semiconductors
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 MV9 UHF 13.6V
|
|
457库存量
|
|
|
¥301.9925
|
|
|
¥243.9331
|
|
|
¥229.3674
|
|
|
¥213.4909
|
|
|
查看
|
|
|
¥201.1626
|
|
|
¥205.8747
|
|
|
¥201.1626
|
|
|
报价
|
|
最低: 1
倍数: 1
|
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 VHV6 600W 50V NI1230H
- MRFE6VP5600HR5
- NXP Semiconductors
-
1:
¥6,115.6052
-
50库存量
|
Mouser 零件编号
841-MRFE6VP5600HR5
|
NXP Semiconductors
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 VHV6 600W 50V NI1230H
|
|
50库存量
|
|
|
¥6,115.6052
|
|
|
¥5,367.5226
|
|
|
¥5,337.5776
|
|
|
¥5,072.8073
|
|
|
查看
|
|
|
报价
|
|
最低: 1
倍数: 1
|
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 VHV6 600W 50V NI1230H
- MRFE6VP5600HR6
- NXP Semiconductors
-
1:
¥2,865.5331
-
无库存交货期 10 周
|
Mouser 零件编号
841-MRFE6VP5600HR6
|
NXP Semiconductors
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 VHV6 600W 50V NI1230H
|
|
无库存交货期 10 周
|
|
|
¥2,865.5331
|
|
|
¥2,454.3487
|
|
|
¥2,354.4228
|
|
|
¥2,332.7607
|
|
|
查看
|
|
|
¥2,190.1547
|
|
|
¥2,291.4818
|
|
|
¥2,190.1547
|
|
|
报价
|
|
最低: 1
倍数: 1
|
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 VHV6 1.25KW ISM NI1230H
- MRFE6VP61K25HR5
- NXP Semiconductors
-
1:
¥3,897.6638
-
121库存量
|
Mouser 零件编号
841-MRFE6VP61K25HR5
|
NXP Semiconductors
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 VHV6 1.25KW ISM NI1230H
|
|
121库存量
|
|
|
¥3,897.6638
|
|
|
¥3,380.1916
|
|
|
¥3,251.0665
|
|
|
¥3,173.153
|
|
|
查看
|
|
|
报价
|
|
最低: 1
倍数: 1
|
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 Wideband RF Power LDMOS Transistor, 100 W CW over 1.8-250 MHz, 50 V
- MRF101BN
- NXP Semiconductors
-
1:
¥366.1878
-
253库存量
|
Mouser 零件编号
771-MRF101BN
|
NXP Semiconductors
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 Wideband RF Power LDMOS Transistor, 100 W CW over 1.8-250 MHz, 50 V
|
|
253库存量
|
|
|
¥366.1878
|
|
|
¥297.8567
|
|
|
¥267.3354
|
|
|
¥258.2389
|
|
|
查看
|
|
|
报价
|
|
最低: 1
倍数: 1
|
否
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 MV9 UHF 13.6V
- AFT05MS031NR1
- NXP Semiconductors
-
1:
¥215.5588
-
49库存量
-
500预期 2026/2/16
|
Mouser 零件编号
841-AFT05MS031NR1
|
NXP Semiconductors
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 MV9 UHF 13.6V
|
|
49库存量
500预期 2026/2/16
|
|
|
¥215.5588
|
|
|
¥172.6301
|
|
|
¥161.9629
|
|
|
¥150.1318
|
|
|
查看
|
|
|
¥134.4926
|
|
|
¥144.5044
|
|
|
¥134.4926
|
|
|
报价
|
|
最低: 1
倍数: 1
|
|
|
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射频金属氧化物半导体场效应(RF MOSFET)晶体管 VHV6 10W PULSE PLD1.5
- MRF6V10010NR4
- NXP Semiconductors
-
1:
¥1,602.1253
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1库存量
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Mouser 零件编号
841-MRF6V10010NR4
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NXP Semiconductors
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射频金属氧化物半导体场效应(RF MOSFET)晶体管 VHV6 10W PULSE PLD1.5
|
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1库存量
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¥1,602.1253
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¥1,358.938
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¥1,298.3135
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¥1,283.9173
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¥1,231.5531
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查看
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报价
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最低: 1
倍数: 1
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射频金属氧化物半导体场效应(RF MOSFET)晶体管 300W 200MHZ TO-247-3L
NXP Semiconductors MHT1803B
- MHT1803B
- NXP Semiconductors
-
1:
¥367.4195
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368库存量
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Mouser 零件编号
771-MHT1803B
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NXP Semiconductors
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射频金属氧化物半导体场效应(RF MOSFET)晶体管 300W 200MHZ TO-247-3L
|
|
368库存量
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¥367.4195
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¥298.9302
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¥280.4095
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¥266.5105
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查看
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¥264.5217
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报价
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最低: 1
倍数: 1
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