ZXMH MOSFET H-Bridges

Diodes Incorporated ZXMH MOSFET H-Bridges feature low on-resistance achievable with low gate drive. Diodes Incorporated ZXMH MOSFET H-Bridges provide 2 x N + 2 x P channels in a SOIC package and low voltage (Vgs = 4.5V) gate drive. Diodes Inc ZXMH MOSFET H-Bridge devices are ideal for DC motor control and DC-AC inverter applications.

结果: 4
选择 图像 零件编号 制造商 描述 数据表 供货情况 单价(含13%增值税) 根据您的数量,按照单价筛选表格中的结果。 数量 RoHS ECAD模型 技术 安装风格 封装 / 箱体 晶体管极性 通道数量 Vds-漏源极击穿电压 Id-连续漏极电流 Rds On-漏源导通电阻 Vgs - 栅极-源极电压 Vgs th-栅源极阈值电压 Qg-栅极电荷 最小工作温度 最大工作温度 Pd-功率耗散 通道模式 封装

Diodes Incorporated MOSFET Mosfet H-Bridge 60/-60V 1.8/-1.4A 42,099库存量
最低: 1
倍数: 1
: 2,500

Si SMD/SMT SOIC-8 N-Channel, P-Channel 4 Channel 60 V 1.42 A, 1.8 A 250 mOhms, 400 mOhms - 20 V, 20 V 1 V 3.2 nC, 5.7 nC - 55 C + 150 C 870 mW Enhancement Reel, Cut Tape, MouseReel

Diodes Incorporated MOSFET Mosfet H-Bridge 100/-100 1.1/-0.9 22,896库存量
最低: 1
倍数: 1
: 2,500

Si SMD/SMT SOIC-8 N-Channel, P-Channel 4 Channel 100 V 850 mA, 1 A 700 mOhms, 1.45 Ohms - 20 V, 20 V 2 V 2.9 nC, 3.5 nC - 55 C + 150 C 870 mW Enhancement Reel, Cut Tape, MouseReel

Diodes Incorporated MOSFET Mosfet H-Bridge 30/-30V 2.7/-2.1A 22,044库存量
最低: 1
倍数: 1
: 2,500

Si SMD/SMT SOIC-8 N-Channel, P-Channel 4 Channel 30 V 2.06 A, 2.72 A 180 mOhms, 330 mOhms - 20 V, 20 V 1 V, 3 V 3.9 nC, 5.2 nC - 55 C + 150 C 10.9 mW Enhancement Reel, Cut Tape, MouseReel

Diodes Incorporated MOSFET MOSFET H-BRIDGE SOP-8L 7,306库存量
最低: 1
倍数: 1
: 2,500

Si SMD/SMT SOIC-8 N-Channel, P-Channel 4 Channel 30 V 4.13 A, 4.98 A 33 mOhms, 55 mOhms - 20 V, 20 V 1 V 9 nC, 12.7 nC - 55 C + 150 C 870 mW Enhancement Reel, Cut Tape, MouseReel