IS38Sx Flash Memory Devices

ISSI IS38Sx Flash Memory Devices are 1GB/2GB/4GB devices that are based on the standard parallel NAND Flash. These memory devices follow industry-standard Serial Peripheral Interface (SPI). The IS38Sx memory devices are designed to provide a non-volatile memory storage solution in systems where the pin count must be kept to a minimum. These memory devices offer an advanced write protection mechanism for data security, such as software write protection with a block lock register. The IS38Sx memory devices support write protection with WP# and permanent block lock protection command.

结果: 16
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ISSI NAND闪存 2Gb, 8bit ECC, 24-ball TFBGA 6x8x1.2 mm, 1.8V, RoHS, Auto Grade, T&R

SMD/SMT TFBGA-24 2 Gbit SPI 256 M x 8 8 bit 2.7 V 3.6 V 22 mA - 40 C + 105 C Reel
ISSI NAND闪存 2Gb, 8bit ECC, 8-contact WSON 8x6mm, 1.8V, RoHS, Auto Grade, T&R

SMD/SMT WSON-8 2 Gbit SPI 256 M x 8 8 bit 2.7 V 3.6 V 22 mA - 40 C + 105 C Reel

ISSI NAND闪存 1Gb, 8bit ECC, 24-ball TFBGA 6x8x1.2 mm, 1.8V, RoHS, Auto Grade, T&R

SMD/SMT TFBGA-24 1 Gbit SPI 64 M x 16 1.7 V 1.95 V 18 mA - 40 C + 105 C Reel
ISSI NAND闪存 1Gb, 8bit ECC, 8-contact WSON 8x6mm, 1.8V, RoHS, Auto Grade, T&R

SMD/SMT WSON-8 1 Gbit SPI 64 M x 16 1.7 V 1.95 V 18 mA - 40 C + 105 C Reel

ISSI NAND闪存 2Gb, 8bit ECC, 24-ball TFBGA 6x8x1.2 mm, 1.8V, RoHS, Auto Grade, T&R

SMD/SMT 2 Gbit SPI 128 M x 16 1.7 V 1.95 V 18 mA - 40 C + 105 C Reel
ISSI NAND闪存 2Gb, 8bit ECC, 8-contact WSON 8x6mm, 1.8V, RoHS, Auto Grade, T&R

SMD/SMT WSON-8 2 Gbit SPI 128 M x 16 1.7 V 1.95 V 18 mA - 40 C + 105 C Reel

ISSI NAND闪存 4Gb, 8bit ECC, 24-ball TFBGA 6x8x1.2 mm, 1.8V, RoHS, T&R, Auto Grade

SMD/SMT TFBGA-24 4 Gbit SPI 128 M x 16 8-bit 1.7 V 1.95 V 18 mA - 45 C + 105 C Reel
ISSI NAND闪存 4Gb, 8bit ECC, 8-contact WSON 8x6mm, 1.8V, RoHS, T&R, Auto Grade

SMD/SMT WSON-8 4 Gbit SPI 128 M x 16 8-bit 1.7 V 1.95 V 18 mA - 45 C + 105 C Reel

ISSI NAND闪存 2Gb, 8bit ECC, 24-ball TFBGA 6x8x1.2 mm, 1.8V, RoHS, Auto Grade

SMD/SMT TFBGA-24 2 Gbit SPI 256 M x 8 8 bit 2.7 V 3.6 V 22 mA - 40 C + 105 C
ISSI NAND闪存 2Gb, 8bit ECC, 8-contact WSON 8x6mm, 1.8V, RoHS, Auto Grade

SMD/SMT WSON-8 2 Gbit SPI 256 M x 8 8 bit 2.7 V 3.6 V 22 mA - 40 C + 105 C

ISSI NAND闪存 1Gb, 8bit ECC, 24-ball TFBGA 6x8x1.2 mm, 1.8V, RoHS, Auto Grade

SMD/SMT TFBGA-24 1 Gbit SPI 64 M x 16 1.7 V 1.95 V 18 mA - 40 C + 105 C
ISSI NAND闪存 1Gb, 8bit ECC, 8-contact WSON 8x6mm, 1.8V, RoHS, Auto Grade

SMD/SMT WSON-8 1 Gbit SPI 64 M x 16 1.7 V 1.95 V 18 mA - 40 C + 105 C

ISSI NAND闪存 2Gb, 8bit ECC, 24-ball TFBGA 6x8x1.2 mm, 1.8V, RoHS, Auto Grade

SMD/SMT TFBGA-24 2 Gbit SPI 128 M x 16 1.7 V 1.95 V 18 mA - 40 C + 105 C
ISSI NAND闪存 2Gb, 8bit ECC, 8-contact WSON 8x6mm, 1.8V, RoHS, Auto Grade

SMD/SMT WSON-8 2 Gbit SPI 128 M x 16 1.7 V 1.95 V 18 mA - 40 C + 105 C

ISSI NAND闪存 4Gb, 8bit ECC, 24-ball TFBGA 6x8x1.2 mm, 1.8V, RoHS, Auto Grade

SMD/SMT TFBGA-24 4 Gbit SPI 128 M x 16 8-bit 1.7 V 1.95 V 18 mA - 45 C + 105 C
ISSI NAND闪存 4Gb, 8bit ECC, 8-contact WSON 8x6mm, 1.8V, RoHS, Auto Grade

SMD/SMT WSON-8 4 Gbit SPI 128 M x 16 8-bit 1.7 V 1.95 V 18 mA - 45 C + 105 C