60V Automotive P-Channel MOSFETs

PANJIT 60V Automotive P-Channel MOSFETs are designed with advanced trench process technology to minimize RDS(ON) while maximizing avalanche ruggedness and space usage. With AEC-Q101 qualification and a high junction temperature of +175°C, these MOSFETs are the optimal choice for automotive design engineers who wish to simplify circuitry while optimizing performance. PANJIT’s P-channel MOSFETs can reduce the circuit complexity of power designs. These components are available in a wide range of compact packages, including SOT-23, SOT-23 6L-1, DFN2020B-6L, DFN3333-8L, DFN5060-8L, and TO-252AA.

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数量 RoHS ECAD模型 技术
安装风格
封装 / 箱体
晶体管极性
通道数量
Vds-漏源极击穿电压
Id-连续漏极电流
Rds On-漏源导通电阻
Vgs - 栅极-源极电压
Vgs th-栅源极阈值电压
Qg-栅极电荷
最小工作温度
最大工作温度
Pd-功率耗散
通道模式
资格
封装
Panjit MOSFET 60V P-Channel Enhancement Mode MOSFET
数据表

Si SMD/SMT DFN3333-8L P-Channel 1 Channel 60 V 18 A 62 mOhms - 20 V, 20 V 2.5 V 22 nC - 55 C + 175 C 39 W Enhancement AEC-Q101 Reel
Panjit MOSFET 60V P-Channel Enhancement Mode MOSFET
数据表

Si SMD/SMT SOT-223-3 P-Channel 1 Channel 60 V 4 A 130 mOhms 20 V 2.5 V 10 nC - 55 C + 150 C 3.1 W Enhancement Reel, Cut Tape