SuperFET™ CE 功率 MOSFET

英飞凌 CoolMOS™ CE 功率 MOSFET 是一个高压功率 MOSFET 技术平台,它根据超级结原理(SJ)进行设计,满足客户要求。CoolMOS™ CE 产品系列包括 500V、600V 和 650V 器件,适用于移动设备和电动工具的低功率充电器、笔记本电脑的适配器、LCD、LED 电视 和 LED 照明。全新系列的 CoolMOS™ 成本经优化可满足消费者的典型要求,不牺牲 CoolMOS™ 的高品质和可靠性,同时价格仍有足够吸引力。
了解更多

结果: 99
选择 图像 零件编号 制造商 描述 数据表 供货情况 单价(含13%增值税) 根据您的数量,按照单价筛选表格中的结果。 数量 RoHS ECAD模型 技术 安装风格 封装 / 箱体 晶体管极性 通道数量 Vds-漏源极击穿电压 Id-连续漏极电流 Rds On-漏源导通电阻 Vgs - 栅极-源极电压 Vgs th-栅源极阈值电压 Qg-栅极电荷 最小工作温度 最大工作温度 Pd-功率耗散 通道模式 商标名 封装
Infineon Technologies MOSFET CONSUMER 998库存量
最低: 1
倍数: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 550 V 6.6 A 2.22 Ohms - 20 V, 20 V 3 V 10.5 nC - 40 C + 150 C 25.7 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET CONSUMER 3,240库存量
最低: 1
倍数: 1
: 3,000

Si SMD/SMT SOT-223-3 N-Channel 1 Channel 500 V 3.1 A 3.28 Ohms - 20 V, 20 V 2.5 V 8.2 nC - 40 C + 150 C 5 W Enhancement CoolMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET N-Ch 500V 13A TO220-3 CoolMOS CE 839库存量
最低: 1
倍数: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 500 V 13 A 280 mOhms - 20 V, 20 V 2.5 V 32.6 nC - 55 C + 150 C 92 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET N-Ch 650V 21A D2PAK-2 CoolMOS CP 61库存量
1,000预期 2026/7/6
最低: 1
倍数: 1
: 1,000

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 600 V 21 A 150 mOhms - 20 V, 20 V 2.5 V 52 nC - 55 C + 150 C 192 W Enhancement CoolMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET N-Ch 600V 7A TO220FP-3 110库存量
最低: 1
倍数: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 7 A 650 mOhms - 20 V, 20 V 2.5 V 20.5 nC - 40 C + 150 C 28 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET CONSUMER 571库存量
最低: 1
倍数: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 15.1 A 940 mOhms - 20 V, 20 V 3 V 39 nC - 55 C + 150 C 31 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET CONSUMER 121库存量
最低: 1
倍数: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 800 V 3.9 A 1.22 Ohms - 20 V, 20 V 2.1 V 23 nC - 40 C + 150 C 31 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET CONSUMER 159库存量
最低: 1
倍数: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 10.8 A 460 mOhms - 20 V, 20 V 2.1 V 64 nC - 40 C + 150 C 34 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET CONSUMER 107库存量
最低: 1
倍数: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 800 V 5.7 A 2.19 Ohms - 20 V, 20 V 3 V 45 nC - 40 C + 150 C 32 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET CONSUMER 328库存量
最低: 1
倍数: 1
: 2,500

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 500 V 3.6 A 2 Ohms - 20 V, 20 V 3 V 6 nC - 55 C + 150 C 33 W Enhancement CoolMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET CONSUMER 451库存量
5,000预期 2026/7/30
最低: 1
倍数: 1
: 2,500

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 600 V 5 A 1.5 Ohms - 20 V, 20 V 3 V 9.4 nC - 40 C + 150 C 49 W Enhancement CoolMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET CONSUMER 130库存量
最低: 1
倍数: 1
: 2,500

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 600 V 3.7 A 2.1 Ohms - 20 V, 20 V 3 V 6.7 nC - 40 C + 150 C 38 W Enhancement CoolMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET CONSUMER 78库存量
2,500预期 2026/8/20
最低: 1
倍数: 1
: 2,500

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 600 V 9.9 A 540 mOhms - 20 V, 20 V 2.5 V 20.5 nC - 40 C + 150 C 82 W Enhancement CoolMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET CONSUMER 1,767库存量
最低: 1
倍数: 1
: 3,000

Si SMD/SMT SOT-223-3 N-Channel 1 Channel 600 V 5 A 3.51 Ohms - 20 V, 20 V 2.5 V 9.4 nC - 40 C + 150 C 5 W Enhancement CoolMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET N-Ch 500V 23A TO220-3 59库存量
最低: 1
倍数: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 500 V 23 A 140 mOhms - 20 V, 20 V 3.5 V 48 nC - 55 C + 150 C 192 W Enhancement CoolMOS Tube

Infineon Technologies MOSFET N-Ch 600V 31A TO247-3 CoolMOS CP 214库存量
最低: 1
倍数: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 31 A 90 mOhms - 20 V, 20 V 2.5 V 80 nC - 55 C + 150 C 255 W Enhancement CoolMOS Tube

Infineon Technologies MOSFET N-Ch 600V 31A TO247-3 CoolMOS CP 1库存量
最低: 1
倍数: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 31 A 90 mOhms - 20 V, 20 V 2.5 V 80 nC - 55 C + 150 C 255 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET N-Ch 650V 11A TO220-3 CoolMOS CP 500库存量
最低: 1
倍数: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 11 A 270 mOhms - 20 V, 20 V 2.5 V 29 nC - 55 C + 150 C 96 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET CONSUMER
25,000在途量
最低: 1
倍数: 1
: 2,500

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 500 V 7.6 A 500 mOhms - 20 V, 20 V 3 V 18.7 nC - 55 C + 150 C 57 W Enhancement CoolMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET CONSUMER
4,000在途量
最低: 1
倍数: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 500 V 18.1 A 280 mOhms - 20 V, 20 V 3.5 V 32.6 nC - 40 C + 150 C 30.4 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET CONSUMER
7,500预期 2026/6/11
最低: 1
倍数: 1
: 2,500

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 600 V 6.8 A 1 Ohms - 20 V, 20 V 2.5 V 13 nC - 40 C + 150 C 61 W Enhancement CoolMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET N-Ch 600V 16.4A ThinPAK-4 CoolMOS CP
3,000预期 2026/7/2
最低: 1
倍数: 1
: 3,000

Si SMD/SMT ThinPAK-5 N-Channel 1 Channel 600 V 16.4 A 199 mOhms - 20 V, 20 V 3.5 V 32 nC - 40 C + 150 C 139 W Enhancement CoolMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET N-Ch 500V 18.5A TO220-3
500预期 2026/7/2
最低: 1
倍数: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 500 V 24.8 A 190 mOhms - 20 V, 20 V 2.5 V 47.2 nC - 55 C + 150 C 152 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET N-Ch 500V 18.5A TO220-3
995预期 2026/7/2
最低: 1
倍数: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 500 V 24.8 A 170 mOhms - 20 V, 20 V 2.5 V 47.2 nC - 55 C + 150 C 152 W Enhancement CoolMOS Tube

Infineon Technologies MOSFET N-Ch 650V 21A TO247-3 CoolMOS CP
207预期 2026/6/11
最低: 1
倍数: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 21 A 165 mOhms - 20 V, 20 V 3.5 V 39 nC - 55 C + 150 C 192 W Enhancement CoolMOS Tube