XPJ101N04N8R & XPJ102N09N8R N-Channel MOSFETs

Torex Semiconductor XPJ101N04N8R and XPJ102N09N8R N-channel MOSFETs feature low on-resistance, reducing energy losses and improving overall system efficiency. Due to their excellent figure of merit (FOM), these MOSFETs are ideal for applications that require high-speed switching characteristics. The XPJ101N04N8R offers on-resistance of 4.4mΩ, while the XPJ102N09N8R offers 9.4mΩ, and both are packaged in a DFN5060-8L package that measures 6mm x 4.9mm x 1.1mm. Torex Semiconductor XPJ101N04N8R and XPJ102N09N8R MOSFETs are suitable for various applications, including DC motors and switching circuits.

结果: 2
选择 图像 零件编号 制造商 描述 数据表 供货情况 单价(含13%增值税) 根据您的数量,按照单价筛选表格中的结果。 数量 RoHS ECAD模型 技术 安装风格 封装 / 箱体 晶体管极性 通道数量 Vds-漏源极击穿电压 Id-连续漏极电流 Rds On-漏源导通电阻 Vgs - 栅极-源极电压 Vgs th-栅源极阈值电压 Qg-栅极电荷 最大工作温度 Pd-功率耗散 通道模式 封装
Torex Semiconductor MOSFET N-channel MOSFET 100V, 9.4mohm, 59A 3,000库存量
最低: 1
倍数: 1

Si SMD/SMT DFN5060-8 N-Channel 1 Channel 100 V 59.2 A 14.3 mOhms - 20 V, 20 V 3.8 V 19 nC + 150 C 62.5 W Enhancement Reel
Torex Semiconductor MOSFET N-channel MOSFET 100V, 4.4mohm, 122A
3,000预期 2026/4/21
最低: 1
倍数: 1

Si SMD/SMT DFN5060-8 N-Channel 1 Channel 100 V 122 A 6.5 mOhms - 20 V, 20 V 3.8 V 40.5 nC + 150 C 125 W Enhancement Reel