DMG1013UW/DMG1016UDW Enhancement Mode MOSFET

Diodes Incorporated DMG1013UW/DMG1016UDW Enhancement Mode MOSFETs were designed to minimize the on-state resistance RDS(on) and yet maintain superior switching performance, making them ideal for high-efficiency power management applications. The DMG1013UW/DMG1016UDW Enhancement Mode MOSFETs from Diodes Incorporated feature low On-Resistance, low gate threshold voltage, low input capacitance, fast switching speed, and low input/output leakage.

结果: 3
选择 图像 零件编号 制造商 描述 数据表 供货情况 单价(含13%增值税) 根据您的数量,按照单价筛选表格中的结果。 数量 RoHS ECAD模型 技术 安装风格 封装 / 箱体 晶体管极性 通道数量 Vds-漏源极击穿电压 Id-连续漏极电流 Rds On-漏源导通电阻 Vgs - 栅极-源极电压 Vgs th-栅源极阈值电压 Qg-栅极电荷 最小工作温度 最大工作温度 Pd-功率耗散 通道模式 资格 封装
Diodes Incorporated MOSFET P-Ch -20V VDSS Enchanced Mosfet 67,942库存量
最低: 1
倍数: 1
卷轴: 3,000

Si SMD/SMT SOT-323-3 P-Channel 1 Channel 20 V 820 mA 750 mOhms - 6 V, 6 V 500 mV 622.4 pC - 55 C + 150 C 310 mW Enhancement Reel, Cut Tape, MouseReel

Diodes Incorporated MOSFET 20V Vdss 6V VGSS Complementary Pair 96,644库存量
最低: 1
倍数: 1
卷轴: 3,000

Si SMD/SMT SOT-363-6 N-Channel, P-Channel 2 Channel 20 V 1.066 A, 845 mA 450 mOhms, 750 mOhms - 6 V, 6 V 500 mV 736.6 nC, 622.4 pC - 55 C + 150 C 330 mW Enhancement Reel, Cut Tape, MouseReel
Diodes Incorporated MOSFET MOSFET BVDSS: 17,952库存量
最低: 1
倍数: 1
卷轴: 3,000

Si SMD/SMT SOT-323-3 P-Channel 1 Channel 20 V 820 mA 1.5 Ohms - 6 V, 6 V 1 V 622.4 pC - 55 C + 150 C 310 mW Enhancement AEC-Q101 Reel, Cut Tape, MouseReel