RF Amplifiers

Marki Microwave RF Amplifiers offer an extensive portfolio of packaged amplifiers, primarily for use as LO buffer amplifiers but also as general-purpose gain blocks. The broadband amplifiers, low-noise amplifiers (LNAs), RF power amplifiers (PAs), and pulse RF amplifiers are available in bare-die and surface-mount packages. The Marki Microwave RF Amplifiers feature a 0GHz to 40GHz RF frequency range. and are ideal for many applications, including wireless and satellite communications, radar systems, broadcasting, and industrial processes.

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数量 RoHS ECAD模型 工作频率
工作电源电压
工作电源电流
增益
NF—噪声系数
类型
安装风格
封装 / 箱体
技术
P1dB - 压缩点
OIP3 - 三阶截点
最小工作温度
最大工作温度
Marki Microwave 射频放大器 A high-linearity, high gain, low noise distributed amplifier capable of providing +22 dBm output power up to 30 GHz. When driven with an input power of 0 to +5 dBm, it can provide sufficient LO drive to power all H and most S diode mixers to 30GHz.
数据表
15库存量
最低： 1
倍数： 1

2 GHz to 30 GHz 5 VDC 237 mA 23 dB 2.7 dB Low Noise Amplifiers SMD/SMT QFN 21 dBm 9 dBm - 40 C + 85 C
Marki Microwave 射频放大器 A broadband, efficient GaAs PHEMT distributed amplifier in a 4mm QFN surface mount package. It is designed to provide optimal LO drive for T3 mixers and offers 13 dB typical gain and 20 dBm typical saturated output power for 165 mA of current.
数据表
21库存量
最低： 1
倍数： 1

0 Hz to 26.5 GHz 26.5 mA 13 dB 5.5 dB Driver Amplifiers SMD/SMT QFN GaAs 15 dBm 26 dBm - 55 C + 85 C
Marki Microwave 射频放大器 The ADM2-0035PA is an LO driver amplifier module with 2 internally connected wideband gain stages and equalization. It is designed to provide sufficient gain and output power for Marki S-diode mixers below 35 GHz with an input power of 0-5 dBm.
数据表
3库存量
最低： 1
倍数： 1

100 MHz to 35 GHz 7 VDC 320 mA 23 dB 5 dB 13 dB, 18 dB 30 dBm - 55 C + 85 C
Marki Microwave 射频放大器 The APM-6849SM is a single stage broadband, low phase noise pre-amplifier designed to provide 11 dB typical gain packaged in a 3 mm QFN with low current consumption.
数据表
23库存量
最低： 1
倍数： 1

2 GHz to 30 GHz 5 V 21 mA 11 dB 26.5 dB Low Noise Amplifiers SMD/SMT QFN GaAs 14 dBm, 20 dBm 20 dBm - 40 C + 85 C
Marki Microwave 射频放大器 A high-linearity low noise amplifier capable of providing +20 dBm output power up to 10 GHz. The ADM-8095PSM can serve either as a linear signal amplifier, or as a saturated driver amplifier for H- or S-diode mixers.
数据表
31在途量
最低： 1
倍数： 1

90 MHz to 10 GHz 5 VDC 39 mA 18 dB 1.2 dB, 1.5 dB Low Noise Amplifiers SMD/SMT DFN 18 dB 30 dBm - 40 C + 85 C
Marki Microwave 射频放大器 A high-linearity low noise amplifier capable of providing +23 dBm output power up to 6 GHz. The ADM-8096PSM can serve either as a linear signal amplifier, or as a saturated driver amplifier for H- or S-diode mixers.
数据表
15预期 2026/7/14
最低： 1
倍数： 1

90 MHz to 6 GHz 5 VDC 58 mA 22 dB 1.5 dB, 1.9 dB Low Noise Amplifiers SMD/SMT DFN 21 dBm 11 dBm - 40 C + 85 C
Marki Microwave 射频放大器 The ADM-8350PSM is a high-linearity, low noise amplifier capable of providing +22 dBm output power up to 6 GHz. The ADM-8350PSM can serve either as a linear signal amplifier, or as a saturated driver amplifier for H- or S-diode mixers.
数据表
6预期 2026/5/18
最低： 1
倍数： 1

90 MHz to 6 GHz 5 VDC 84 mA 23 dB 1.8 dB, 2.5 dB Low Noise Amplifiers SMD/SMT DFN 22 dBm 40 dBm - 40 C + 85 C
Marki Microwave 射频放大器 A high-linearity, high gain, low noise distributed amplifier capable of providing +23 dBm output power up to 38 GHz. When driven with an input power of 0 to +5 dBm, it can provide sufficient LO drive to power all H and most S diode mixers to 40GHz.
数据表
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5 V 237 mA 40 dB 4 dB Low Noise Amplifiers SMD/SMT QFN 27 dBm, 40 dBm 27 dBm, 40 dBm - 40 C + 85 C