High Speed Asynchronous SRAMs

ISSI High-Speed Asynchronous SRAMs are high-speed, static RAMs organized in various access speeds and densities (64KB to 16MB). These High-Speed Asynchronous SRAMs are fabricated using ISSI's high-performance CMOS technology. This highly reliable process, coupled with innovative circuit design techniques, yields high-performance and low-power consumption devices. ISSI High-Speed Asynchronous SRAMs offer features that include high access speed, low active power, and low standby power with a single power supply. These ISSI devices are excellent in many industrial and automotive applications.

结果: 3
选择 图像 零件编号 制造商 描述 数据表 供货情况 单价(含13%增值税) 根据您的数量,按照单价筛选表格中的结果。 数量 RoHS ECAD模型 存储容量 访问时间 电源电压-最大 电源电压-最小 电源电流—最大值 最小工作温度 最大工作温度 安装风格 封装 / 箱体 封装
ISSI 静态随机存取存储器 16Mb, Low Power/Power Saver,Async,1Mb x 16,1.65v-2.2v,48 Ball mBGA (9x11 mm), RoHS 无库存交货期 12 周
最低: 210
倍数: 210

16 Mbit 35 ns 2.2 V 1.65 V 30 mA - 40 C + 85 C SMD/SMT TFBGA-48 Tray

ISSI 静态随机存取存储器 16Mb, Low Power/Power Saver,Async,1Mb x 16,1.65v-2.2v,48 Pin TSOP I, RoHS 无库存交货期 12 周
最低: 96
倍数: 96

16 Mbit 35 ns 2.2 V 1.65 V 30 mA - 40 C + 85 C SMD/SMT TSOP-48 Tray
ISSI 静态随机存取存储器 16Mb, Low Power/Power Saver,Async,1Mb x 16,1.65v-2.2v,48 Ball mBGA (9x11 mm), RoHS 无库存交货期 12 周
最低: 2,000
倍数: 2,000
卷轴: 2,000

16 Mbit 35 ns 2.2 V 1.65 V 30 mA - 40 C + 85 C SMD/SMT TFBGA-48 Reel