DI006H03SQ

Diotec Semiconductor
637-DI006H03SQ
DI006H03SQ

制造商:

说明:
MOSFET MOSFET, SO-8, 30V, 6A, 150C, N+P

ECAD模型:
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库存量: 3,908

库存:
3,908 可立即发货
生产周期:
10 周 大于所示数量的预计工厂生产时间。
最少: 1   倍数: 1
单价:
¥-.--
总价:
¥-.--
预估关税:

定价 (含13% 增值税)

数量 单价
总价
¥20.9276 ¥20.93
¥13.4809 ¥134.81
¥9.1869 ¥918.69
¥7.3337 ¥3,666.85
¥6.7461 ¥6,746.10
¥5.9212 ¥11,842.40
整卷卷轴(请按4000的倍数订购)
¥5.2771 ¥21,108.40
¥5.1641 ¥41,312.80
24,000 报价

产品属性 属性值 选择属性
Diotec Semiconductor
产品种类: MOSFET
RoHS:  
Si
SMD/SMT
SO-8
N-Channel, P-Channel
4 Channel
30 V
4.2 A, 6 A
25 mOhms, 50 mOhms
- 20 V, 20 V
1 V, 2 V
11.7 nC, 11.4 nC
- 55 C
+ 150 C
1.5 W
Enhancement
Reel
Cut Tape
商标: Diotec Semiconductor
配置: Quad
下降时间: 8.7 ns, 13.5 ns
正向跨导 - 最小值: 4 S, 3.5 S
湿度敏感性: Yes
产品类型: MOSFETs
上升时间: 15 ns, 4.9 ns
系列: DI0XX
工厂包装数量: 4000
子类别: Transistors
典型关闭延迟时间: 17.5 ns, 28.2 ns
典型接通延迟时间: 11.2 ns, 7.5 ns
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已选择的属性: 0

合规代码
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
TARIC:
8541290000
MXHTS:
8541299900
ECCN:
EAR99
原产地分类
原产国:
中国
组装原产国/地区:
不可用
扩散国家:
不可用
发货时,国家/地区可能会发生变化。

Advanced Trench Technology Power MOSFETs

Diotec Semiconductors Advanced Trench Technology Power MOSFETs feature low on-state resistance and fast switching time. These MOSFETs components are available in standard commercial/industrial grading. The power MOSFETs are offered as N, P, or dual N+P channel types in single, dual, and H bridge configurations. These MOSFETs offer a 100mA to 280A current range and a 20V to 250V voltage range.

DI006H03SQ N/P-Channel Power MOSFET H-Bridge

Diotec Semiconductor DI006H03SQ N/P-Channel Power MOSFET H-Bridge delivers a low on-state resistance, a low gate charge, and fast switching times. With a wide junction temperature range from -55°C to +150°C, DI006H03SQ provides 1.5W maximum power dissipation and a ±20V maximum continuous gate-source voltage. The low-profile SO-8 packaged DI006H03SQ is geared toward DC/DC converters, power supplies, DC drives, synchronous rectifiers, and commercial/industrial-grade applications.