SuperFET® III MOSFET

安森美(onsemi) SuperFET® III MOSFET是高压超结 (SJ) N沟道MOSFET,旨在满足电信、服务器、电动汽车 (EV) 充电器和太阳能产品的高功率密度、系统效率和超高可靠性要求。此系列器件拥有出色的可靠性、低电磁干扰、超高的效率和卓越的热性能,是高性能应用的理想选择。除高性能外,SuperFET III MOSFET还通过丰富的封装选项为产品设计师提供高度的灵活性,特别是在尺寸受限的设计中。

结果: 127
选择 图像 零件编号 制造商 描述 数据表 供货情况 单价(含13%增值税) 根据您的数量,按照单价筛选表格中的结果。 数量 RoHS ECAD模型 技术 安装风格 封装 / 箱体 晶体管极性 通道数量 Vds-漏源极击穿电压 Id-连续漏极电流 Rds On-漏源导通电阻 Vgs - 栅极-源极电压 Vgs th-栅源极阈值电压 Qg-栅极电荷 最小工作温度 最大工作温度 Pd-功率耗散 通道模式 资格 商标名 封装

onsemi MOSFET SUPERFET3 650V TO247 PKG 309库存量
最低: 1
倍数: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 75 A 27.4 mOhms - 30 V, 30 V 3 V 227 nC - 55 C + 150 C 595 W Enhancement AEC-Q101 SuperFET III Tube

onsemi MOSFET SuperFET3 650V 23 mOhm 35库存量
900预期 2026/3/27
最低: 1
倍数: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 75 A 23 mOhms - 30 V, 30 V 2.5 V 222 nC - 55 C + 150 C 595 W Enhancement SuperFET III Tube

onsemi MOSFET SuperFET3 650V 99 mOhm, TO247 PKG 328库存量
最低: 1
倍数: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 30 A 99 mOhms - 30 V, 30 V 2.5 V 61 nC - 55 C + 150 C 227 W Enhancement Tube

onsemi MOSFET SuperFET3 650V 99 mOhm,TO220 PKG 1,233库存量
最低: 1
倍数: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 30 A 79 mOhms - 30 V, 30 V 2.5 V 61 nC - 55 C + 150 C 227 W Enhancement Tube

onsemi MOSFET SUPERFET3 650V 24A 125 mOhm 344库存量
最低: 1
倍数: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 24 A 125 mOhms - 30 V, 30 V 2.5 V 46 nC - 55 C + 150 C 181 W Enhancement Tube

onsemi MOSFET SUPERFET3 650V TO220 PKG 630库存量
最低: 1
倍数: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 17 A 190 mOhms - 30 V, 30 V 2.5 V 33 nC - 55 C + 150 C 144 W Enhancement Tube

onsemi MOSFET SUPERFET3 650V TO220 PKG 721库存量
最低: 1
倍数: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 12 A 260 mOhms - 30 V, 30 V 2.5 V 24 nC - 55 C + 150 C 90 W Enhancement Tube
onsemi MOSFET SUPERFET3 FAST 95MOHM TO-247-4 450库存量
最低: 1
倍数: 1

Si Through Hole N-Channel 1 Channel 650 V 30 A 95 mOhms - 30 V, 30 V 4 V 58 nC - 55 C + 150 C 208 W Enhancement Tube

onsemi MOSFET FRFET 650 V 65 A 40 mOhm TO-247 9库存量
最低: 1
倍数: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 65 A 32 mOhms - 30 V, 30 V 5 V 159 nC - 55 C + 150 C 446 W Enhancement SuperFET III Tube

onsemi MOSFET SUPERFET3 FAST 67MOHM T 68库存量
最低: 1
倍数: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 40 A 67 mOhms - 30 V, 30 V 4 V 80 nC - 55 C + 150 C 266 W Enhancement Tube
onsemi MOSFET SF3 FAST 95MOHM PQFN88 2,850库存量
最低: 1
倍数: 1
卷轴: 3,000

Si SMD/SMT TDFN-4 N-Channel 1 Channel 650 V 30 A 95 mOhms - 30 V, 30 V 4 V 58 nC - 55 C + 150 C 208 W Enhancement Reel, Cut Tape, MouseReel

onsemi MOSFET SUPERFET3 650V FRFET 190M 434库存量
最低: 1
倍数: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 20 A 190 mOhms - 30 V, 30 V 3 V 34 nC - 55 C + 150 C 162 W Enhancement SuperFET III Tube
onsemi MOSFET SUPERFET3 650V FRFET110MOHM TF220 25库存量
最低: 1
倍数: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 30 A 110 mOhms - 30 V, 30 V 3 V 62 nC - 55 C + 150 C 240 W Enhancement SuperFET III Tube
onsemi MOSFET SUPERFET3 FAST 190MOHM TO-220F 424库存量
最低: 1
倍数: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 16 A 190 mOhms - 30 V, 30 V 4 V 31 nC - 55 C + 150 C 32 W Enhancement Tube
onsemi MOSFET SF3 650V EASY 125MOHM D2PAK AUTO 20库存量
最低: 1
倍数: 1
卷轴: 800

Si D2PAK-3 (TO-263-3) Reel, Cut Tape
onsemi MOSFET SF3 650V EASY 260MOHM D2 473库存量
最低: 1
倍数: 1
卷轴: 800

Si D2PAK-3 (TO-263-3) Reel, Cut Tape


onsemi MOSFET SF3 FRFET AUTO 40MOHM T 12库存量
最低: 1
倍数: 1

Si Through Hole TO-247-4 N-Channel 1 Channel 650 V 65 A 40 mOhms - 30 V, 30 V 5 V 160 nC - 55 C + 150 C 446 W Enhancement Tube

onsemi MOSFET SF3 650V EASY 40MOHM TO- 134库存量
最低: 1
倍数: 1

Si TO-247-3 Tube
onsemi MOSFET SUPERFET3 650V TO220F PKG 754库存量
最低: 1
倍数: 1

Si Through Hole N-Channel 1 Channel 650 V 6 A 600 mOhms - 30 V, 30 V 4.5 V 11 nC - 55 C + 150 C 24 W Enhancement Tube
onsemi MOSFET SUPERFET3 650V TO220F PKG 10库存量
最低: 1
倍数: 1

Si Through Hole N-Channel 1 Channel 650 V 12 A 250 mOhms - 30 V, 30 V 4.5 V 24 nC - 55 C + 150 C 31 W Enhancement Tube

onsemi MOSFET FRFET 650V 75A 27.4 mOhm 32库存量
最低: 1
倍数: 1

Si Through Hole TO-247-4 N-Channel 1 Channel 650 V 75 A 27.4 mOhms - 30 V, 30 V 5 V 259 nC - 55 C + 150 C 595 W Enhancement Tube

onsemi MOSFET FRFET 650 V 65 A 40 mOhm TO-247 26库存量
最低: 1
倍数: 1

Si Through Hole TO-247-4 N-Channel 1 Channel 650 V 65 A 40 mOhms - 30 V, 30 V 3 V 158 nC - 55 C + 150 C 446 W Enhancement SuperFET III Tube
onsemi MOSFET 650V 64MOHM MOSFET
6,000预期 2026/10/16
最低: 1
倍数: 1
卷轴: 3,000

Si SMD/SMT TDFN-4 N-Channel 1 Channel 650 V 40 A 64 mOhms - 30 V, 30 V 4 V 82 nC - 55 C + 150 C 260 W Enhancement SuperFET III Reel, Cut Tape, MouseReel
onsemi MOSFET SF3 FRFET 650V 90MOHM PQFN88
2,998预期 2027/2/3
最低: 1
倍数: 1
卷轴: 3,000

Si SMD/SMT TDFN-4 N-Channel 1 Channel 650 V 36 A 90 mOhms - 30 V, 30 V 5 V 66 nC - 55 C + 150 C 272 W Enhancement Reel, Cut Tape, MouseReel
onsemi MOSFET PQFN88 PKG, 99mohm 650V, SuperFET3 21,000工厂有库存
最低: 3,000
倍数: 3,000
卷轴: 3,000
Si SMD/SMT Power-88-4 N-Channel 1 Channel 650 V 30 A 87 mOhms - 30 V, 30 V 2.5 V 56 nC - 55 C + 150 C 227 W Enhancement SuperFET III Reel