600V第四代PrestoMOS Super Junction MOSFET

ROHM Semiconductor 600V第四代PrestoMOS™超级结MOSFET利用原创专利技术加速寄生二极管,获得超快反向恢复特性 实现低功耗。 与IGBT实施相比,PrestoMOS设计在轻负载时可将功率损耗降低约58%。此外,提高开启MOSFET所需的参考电压可防止自导通(这是造成损耗的主要原因之一)。经过优化的内置寄生二极管改善了Super Junction MOSFET的软恢复指数,可降低可能导致故障的噪声。

结果: 14
选择 图像 零件编号 制造商 描述 数据表 供货情况 单价(含13%增值税) 根据您的数量,按照单价筛选表格中的结果。 数量 RoHS ECAD模型 技术 安装风格 封装 / 箱体 晶体管极性 通道数量 Vds-漏源极击穿电压 Id-连续漏极电流 Rds On-漏源导通电阻 Vgs - 栅极-源极电压 Vgs th-栅源极阈值电压 Qg-栅极电荷 最小工作温度 最大工作温度 Pd-功率耗散 通道模式 封装
ROHM Semiconductor MOSFET TO220 650V 39A N-CH MOSFET 1,904库存量
最低: 1
倍数: 1

Si Through Hole TO-220FM-3 N-Channel 1 Channel 600 V 8 A 300 mOhms - 30 V, 30 V 6.5 V 21 nC - 55 C + 150 C 54 W Enhancement Tube
ROHM Semiconductor MOSFET TO220 600V 12A N-CH MOSFET 2,029库存量
最低: 1
倍数: 1

Si Through Hole TO-220FM-3 N-Channel 1 Channel 600 V 20 A 185 mOhms - 30 V, 30 V 6 V 28 nC - 55 C + 150 C 62 W Enhancement Tube
ROHM Semiconductor MOSFET TO252 650V 39A N-CH MOSFET 5,000库存量
最低: 2,500
倍数: 2,500
卷轴: 2,500

Si SMD/SMT TO-252-3 N-Channel 1 Channel 600 V 13 A 300 mOhms - 30 V, 30 V 6.5 V 21 nC - 55 C + 150 C 131 W Enhancement Reel
ROHM Semiconductor MOSFET TO220 600V 10A N-CH MOSFET 1,963库存量
最低: 1
倍数: 1

Si Through Hole TO-220FM-3 N-Channel 1 Channel 600 V 10 A 204 mOhms - 30 V, 30 V 6.5 V 27 nC - 55 C + 150 C 61 W Enhancement Tube
ROHM Semiconductor MOSFET TO220 650V 105A N-CH MOSFET 1,959库存量
最低: 1
倍数: 1

Si Through Hole TO-220FM-3 N-Channel 1 Channel 600 V 17 A 114 mOhms - 30 V, 30 V 6.5 V 50 nC - 55 C + 150 C 81 W Enhancement Tube
ROHM Semiconductor MOSFET TO220 650V 42A N-CH MOSFET 2,025库存量
最低: 1
倍数: 1

Si Through Hole TO-220FM-3 N-Channel 1 Channel 600 V 14 A 260 mOhms - 30 V, 30 V 6 V 20 nC - 55 C + 150 C 54 W Enhancement Tube
ROHM Semiconductor MOSFET TO247 650V 165A N-CH MOSFET 1,153库存量
最低: 1
倍数: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 55 A 71 mOhms - 30 V, 30 V 6.5 V 80 nC - 55 C + 150 C 543 W Enhancement Tube
ROHM Semiconductor MOSFET TO247 650V 231A N-CH MOSFET 1,190库存量
最低: 1
倍数: 1

Si Through Hole TO-220FM-3 N-Channel 1 Channel 600 V 77 A 51 mOhms - 30 V, 30 V 6.5 V 108 nC - 55 C + 150 C 781 W Enhancement Tube
ROHM Semiconductor MOSFET TO220 650V 72A N-CH MOSFET 2,003库存量
最低: 1
倍数: 1

Si Through Hole TO-220AB-3 N-Channel 1 Channel 600 V 24 A 153 mOhms - 30 V, 30 V 6.5 V 38 nC - 55 C + 150 C 245 W Enhancement Tube
ROHM Semiconductor MOSFET TO220 650V 72A N-CH MOSFET 1,969库存量
最低: 1
倍数: 1

Si Through Hole TO-220FM-3 N-Channel 1 Channel 600 V 13 A 153 mOhms - 30 V, 30 V 6.5 V 38 nC - 55 C + 150 C 70 W Enhancement Tube
ROHM Semiconductor MOSFET TO220 650V 165A N-CH MOSFET 2,042库存量
最低: 1
倍数: 1

Si Through Hole TO-220FM-3 N-Channel 1 Channel 600 V 23 A 71 mOhms - 30 V, 30 V 6.5 V 80 nC - 55 C + 150 C 100 W Enhancement Tube
ROHM Semiconductor MOSFET TO3P 650V 165A N-CH MOSFET 567库存量
最低: 1
倍数: 1

Si Through Hole TO-3PF-3 N-Channel 1 Channel 600 V 23 A 71 mOhms - 30 V, 30 V 6.5 V 80 nC - 55 C + 150 C 99 W Enhancement Tube
ROHM Semiconductor MOSFET Transistor MOSFET, Nch 600V 77A 4th Gen, Fast Recover 720库存量
最低: 1
倍数: 1

Si Through Hole TO-3PF-3 N-Channel 1 Channel 600 V 29 A 51 Ohms - 30 V, 30 V 6.5 V 108 nC - 55 C + 150 C 113 W Enhancement Tube
ROHM Semiconductor MOSFET TO220 650V 105A N-CH MOSFET
1,000预期 2026/7/9
最低: 1
倍数: 1

Si Through Hole TO-220AB-3 N-Channel 1 Channel 600 V 35 A 114 mOhms - 30 V, 30 V 6.5 V 50 nC - 55 C + 150 C 347 W Enhancement Tube