T1GA26xx-SM Low Noise Amplifiers

Qorvo TGA26xx-SM Low Noise Amplifiers are fabricated on a 0.25um GaN on SiC process (TQGaN25). Covering 2GHz to 6GHz, the TGA26xx-SM Amplifiers typically provides >22dB small signal gain and 30dBm of OTOI with 1.0dB NF. In addition to the high electrical performance, this GaN amplifier also provides a high level of input power robustness. Able to survive a high level of input power without performance degradation, Qorvo TGA26xx-SM provides flexibility regarding receive chain protection, resulting in reduced board space. This device is ideal for radar and satellite communication applications.

结果: 2
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Qorvo 射频放大器 9-10GHz 20W GaN PAE>40% SSG >34dB
700预期 2026/4/10
最低: 1
倍数: 1
卷轴: 250

9 GHz to 10 GHz 20 V to 32 V 365 mA 34 dB Power Amplifiers SMD/SMT QFN-22 GaN SiC - 40 C + 85 C TGA2624 Reel, Cut Tape
Qorvo 射频放大器 9-10GHz 35W GaN PAE >42% SSG >30dB
N/A
最低: 1
倍数: 1

9 GHz to 10 GHz 28 V 290 mA 32.7 dB Power Amplifiers SMD/SMT QFN-22 GaN SiC 40 dBm - 40 C + 85 C TGA2622 Waffle