300V to 1200V IGBTs

Infineon 300-1200V IGBTs have an extensive portfolio of IGBTs that achieves the highest performance for specific application requirements. The Infineon IGBT portfolio includes the new ultra-fast IRG7PH 1200V Trench IGBTs that offer higher system efficiency while cutting switching losses and delivering higher switching frequencies. Infineon IRG7PH ultra-fast 1200V IGBTs utilize thin wafer Field-Stop Trench technology that significantly reduces switching and conduction losses to deliver higher power density and greater efficiency at higher frequencies.

结果: 3
选择 图像 零件编号 制造商 描述 数据表 供货情况 单价(含13%增值税) 根据您的数量,按照单价筛选表格中的结果。 数量 RoHS ECAD模型 技术 封装 / 箱体 安装风格 配置 集电极—发射极最大电压 VCEO 集电极—射极饱和电压 栅极/发射极最大电压 在25 C的连续集电极电流 Pd-功率耗散 最小工作温度 最大工作温度 系列 封装
Infineon Technologies 绝缘栅双极晶体管(IGBT) LOW LOSS DuoPack 600V 10A 250库存量
最低: 1
倍数: 1

Si TO-220-3 Through Hole Single 600 V 1.5 V - 20 V, 20 V 24 A 110 W - 40 C + 175 C TRENCHSTOP IGBT Tube

Infineon Technologies 绝缘栅双极晶体管(IGBT) LOW LOSS DuoPack 600V 20A 475库存量
最低: 1
倍数: 1

Si TO-247-3 Through Hole Single 600 V 1.5 V - 20 V, 20 V 41 A 166 W - 40 C + 175 C Trenchstop IGBT3 Tube
Infineon Technologies 绝缘栅双极晶体管(IGBT) LOW LOSS DuoPack 600V 20A 5库存量
最低: 1
倍数: 1

Si TO-220-3 Through Hole Single 600 V 1.5 V - 20 V, 20 V 41 A 166 W - 40 C + 175 C TRENCHSTOP IGBT Tube