结果: 14
选择 图像 零件编号 制造商 描述 数据表 供货情况 单价(含13%增值税) 根据您的数量,按照单价筛选表格中的结果。 数量 RoHS ECAD模型 技术 安装风格 封装 / 箱体 晶体管极性 通道数量 Vds-漏源极击穿电压 Id-连续漏极电流 Rds On-漏源导通电阻 Vgs - 栅极-源极电压 Vgs th-栅源极阈值电压 Qg-栅极电荷 最小工作温度 最大工作温度 Pd-功率耗散 通道模式 商标名 封装
STMicroelectronics MOSFET N-Ch 600V 0.097 Ohm 29A Fdmesh II FD 668库存量
最低: 1
倍数: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 29 A 110 mOhms - 25 V, 25 V 3 V 80.4 nC - 55 C + 150 C 190 W Enhancement Tube
STMicroelectronics MOSFET N-channel 600V, 10A FDMesh II 498库存量
最低: 1
倍数: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 10 A 450 mOhms - 25 V, 25 V 3 V 30 nC - 55 C + 150 C 90 W Enhancement FDmesh Tube
STMicroelectronics MOSFET N-Ch 600 Volt 20 Amp 5,400库存量
最低: 1
倍数: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 20 A 290 mOhms - 30 V, 30 V 3 V 54 nC - 65 C + 150 C 192 W Enhancement FDmesh Tube
STMicroelectronics MOSFET N-Ch 600V 0.57 Ohm 8A FDmesh II PWR 946库存量
最低: 1
倍数: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 8 A 600 mOhms - 25 V, 25 V 3 V 20 nC - 55 C + 150 C 25 W Enhancement Tube
STMicroelectronics MOSFET N-Ch Power Mosfet 600V 0.097 Ohm 29A 1,190库存量
最低: 1
倍数: 1
卷轴: 1,000

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 650 V 29 A 110 mOhms - 25 V, 25 V 2 V 84 nC - 55 C + 150 C 250 W Enhancement Reel, Cut Tape, MouseReel
STMicroelectronics MOSFET N-Ch 500 Volt 20 Amp 375库存量
最低: 1
倍数: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 500 V 20 A 250 mOhms - 30 V, 30 V 3 V 56 nC - 65 C + 150 C 192 W Enhancement FDmesh Tube

STMicroelectronics MOSFET N-Ch 500 Volt 20 Amp 520库存量
最低: 1
倍数: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 500 V 20 A 250 mOhms - 30 V, 30 V 3 V 53 nC - 65 C + 150 C 214 W Enhancement FDmesh Tube
STMicroelectronics MOSFET N-Ch 500 Volt 20 Amp 2,058库存量
最低: 1
倍数: 1
卷轴: 1,000

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 500 V 20 A 250 mOhms - 30 V, 30 V 5 V 38 nC - 65 C + 150 C 192 W Enhancement FDmesh Reel, Cut Tape, MouseReel
STMicroelectronics MOSFET N-Ch 600V 0.57 Ohm 8A FDmesh II PWR 857库存量
最低: 1
倍数: 1
卷轴: 2,500

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 650 V 8 A 600 mOhms - 25 V, 25 V 2 V 19 nC - 55 C + 150 C 70 W Enhancement Reel, Cut Tape, MouseReel

STMicroelectronics MOSFET N-Ch 600V 0.097 Ohm 29A FDmesh II FD 169库存量
600预期 2026/3/5
最低: 1
倍数: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 29 A 110 mOhms - 25 V, 25 V 3 V 80.4 nC - 55 C + 150 C 190 W Enhancement Tube
STMicroelectronics MOSFET N-Ch, 600V-0.37ohms FDMesh 10A 107库存量
最低: 1
倍数: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 10 A 450 mOhms - 25 V, 25 V 4 V 30 nC - 55 C + 150 C 90 W Enhancement FDmesh Tube

STMicroelectronics MOSFET N-Ch 600 Volt 20 Amp 235库存量
600预期 2026/2/10
最低: 1
倍数: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 20 A 290 mOhms - 30 V, 30 V 3 V 37 nC - 65 C + 150 C 214 W Enhancement FDmesh Tube
STMicroelectronics MOSFET N-channel 600V, 10A FDMesh II 无库存交货期 14 周
最低: 1
倍数: 1
卷轴: 2,500

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 600 V 10 A 450 mOhms - 25 V, 25 V 3 V 30 nC - 55 C + 150 C 90 W Enhancement FDmesh Reel, Cut Tape, MouseReel
STMicroelectronics MOSFET N-Ch 600V 0.097 Ohm 29A FDmesh II 无库存交货期 14 周
最低: 1,000
倍数: 1,000

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 29 A 110 mOhms - 25 V, 25 V 3 V 80.4 nC - 55 C + 150 C 190 W Enhancement Tube