TRENCHSTOP™ IGBT7 S7

英飞凌TRENCHSTOP™ IGBT7 S7提供丰富的1200V产品组合,适用于所有需要短路能力/高度可靠的工业应用。IGBT7 S7是一款高效、耐受短路的分立式IGBT,饱和电压至少比其他器件低 10%。

结果: 19
选择 图像 零件编号 制造商 描述 数据表 供货情况 单价(含13%增值税) 根据您的数量,按照单价筛选表格中的结果。 数量 RoHS ECAD模型 技术 封装 / 箱体 安装风格 配置 集电极—发射极最大电压 VCEO 集电极—射极饱和电压 栅极/发射极最大电压 在25 C的连续集电极电流 Pd-功率耗散 最小工作温度 最大工作温度 系列 封装
Infineon Technologies 绝缘栅双极晶体管(IGBT) 1200 V, 100 A IGBT7 S7 with anti-parallel diode in TO247PLUS-3pin package 1,112库存量
最低: 1
倍数: 1

Si TO-247-3 Through Hole Single 1.2 kV 1.65 V - 20 V, 20 V 188 A 824 W - 40 C + 175 C IGBT7 S7 Tube
Infineon Technologies 绝缘栅双极晶体管(IGBT) 1200 V, 120 A IGBT7 S7 with anti-parallel diode in TO247PLUS-3pin package 601库存量
最低: 1
倍数: 1

Si TO-247-3 Through Hole Single 1.2 kV 1.65 V - 20 V, 20 V 216 A 1.004 kW - 40 C + 175 C IGBT7 S7 Tube
Infineon Technologies 绝缘栅双极晶体管(IGBT) 1200 V, 100 A IGBT7 S7 in TO247PLUS-3pin package 1,573库存量
最低: 1
倍数: 1

Si TO-247-3 Through Hole Single 1.2 kV 1.65 V - 20 V, 20 V 188 A 824 W - 40 C + 175 C IGBT7 S7 Tube
Infineon Technologies 绝缘栅双极晶体管(IGBT) 1200 V, 120 A IGBT7 S7 in TO247PLUS-3pin package 305库存量
最低: 1
倍数: 1

Si TO-247-3 Through Hole Single 1.2 kV 1.65 V - 20 V, 20 V 216 A 1.004 kW - 40 C + 175 C IGBT7 S7 Tube
Infineon Technologies 绝缘栅双极晶体管(IGBT) 1200 V, 75 A IGBT7 S7 with anti-parallel diode in TO247PLUS-3pin package 176库存量
240预期 2027/1/28
最低: 1
倍数: 1

Si TO-247-3 Through Hole Single 1.2 kV 1.65 V - 20 V, 20 V 154 A 630 W - 40 C + 175 C IGBT7 S7 Tube


Infineon Technologies 绝缘栅双极晶体管(IGBT) 1200 V, 50 A IGBT7 S7 with anti-parallel diode in TO-247 package 1,708库存量
最低: 1
倍数: 1

Si TO-247-3 Through Hole Single 1.2 kV 1.65 V - 20 V, 20 V 82 A 428 W - 40 C + 175 C IGBT7 S7 Tube


Infineon Technologies 绝缘栅双极晶体管(IGBT) 1200 V, 8 A IGBT7 S7 with anti-parallel diode in TO-247 package 84库存量
720预期 2026/7/21
最低: 1
倍数: 1
Si TO-247-3 Through Hole Single 1.2 kV 1.65 V - 20 V, 20 V 21 A 106 W - 40 C + 175 C IGBT7 S7 Tube


Infineon Technologies 绝缘栅双极晶体管(IGBT) 1200 V, 15 A IGBT7 S7 with anti-parallel diode in TO-247 package 479库存量
最低: 1
倍数: 1
Si TO-247-3 Through Hole Single 1.2 kV 1.65 V - 20 V, 20 V 36 A 176 W - 40 C + 175 C IGBT7 S7 Tube

Infineon Technologies 绝缘栅双极晶体管(IGBT) 1200 V, 40 A IGBT7 S7 with anti-parallel diode in TO-247 package 17库存量
1,680在途量
最低: 1
倍数: 1
Si TO-247-3 Through Hole Single 1.2 kV 1.65 V - 20 V, 20 V 82 A 357 W - 40 C + 175 C IGBT7 S7 Tube
Infineon Technologies 绝缘栅双极晶体管(IGBT) 1200 V, 75 A IGBT7 S7 in TO247PLUS-3pin package 130库存量
最低: 1
倍数: 1

Si TO-247-3 Through Hole Single 1.2 kV 1.65 V - 20 V, 20 V 154 A 630 W - 40 C + 175 C IGBT7 S7 Tube


Infineon Technologies 绝缘栅双极晶体管(IGBT) 1200 V, 25 A IGBT7 S7 with anti-parallel diode in TO-247 package
475预期 2026/7/27
最低: 1
倍数: 1

Si TO-247-3 Through Hole Single 1.2 kV 1.65 V - 20 V, 20 V 55 A 250 W - 40 C + 175 C IGBT7 S7 Tube
Infineon Technologies 绝缘栅双极晶体管(IGBT) 1200 V TRENCHSTOP IGBT 7 technology

Si PG-TO247-3-U04 Through Hole Single 1.2 kV 2 V 20 V 48 A 176 W - 40 C + 175 C Tube
Infineon Technologies 绝缘栅双极晶体管(IGBT) 1200 V TRENCHSTOP IGBT 7 technology

Si PG-TO247-3-U04 Through Hole Single 1.2 kV 2 V 20 V 71 A 125 W - 40 C + 175 C Tube
Infineon Technologies 绝缘栅双极晶体管(IGBT) 1200 V TRENCHSTOP IGBT 7 technology

Si PG-TO247-4-U04 Through Hole Single 1.2 kV 1.92 V 20 V 48 A 176 W - 40 C + 175 C Tube
Infineon Technologies 绝缘栅双极晶体管(IGBT) 1200 V TRENCHSTOP IGBT 7 technology

Si PG-TO247-4-U04 Through Hole Single 1.2 kV 1.93 V 20 V 71 A 250 W - 40 C + 175 C Tube
Infineon Technologies 绝缘栅双极晶体管(IGBT) 1200 V TRENCHSTOP IGBT 7 technology

Si PG-TO247-4-U04 Through Hole Single 1.2 kV 1.94 V 20 V 97 A 357 W - 40 C + 175 C Tube
Infineon Technologies 绝缘栅双极晶体管(IGBT) 1200 V TRENCHSTOP IGBT 7 technology

Si PG-TO247-4-U04 Through Hole Single 1.2 kV 1.94 V 20 V 107 A 429 W - 40 C + 175 C Tube
Infineon Technologies 绝缘栅双极晶体管(IGBT) 1200 V TRENCHSTOP IGBT 7 technology

Si PG-TO247-3-U04 Through Hole Single 1.2 kV 2 V 20 V 85 A 357 W - 40 C + 175 C Tube
Infineon Technologies 绝缘栅双极晶体管(IGBT) 1200 V TRENCHSTOP IGBT 7 technology

Si PG-TO247-3-U04 Through Hole Single 1.2 kV 2.1 V 20 V 97 A 429 W - 40 C + 175 C Tube