MMDT5551HE3 Dual NPN Transistor

Micro Commercial Components (MCC) MMDT5551HE3 Dual NPN Transistor is an AEC-Q101 qualified small-signal Bipolar Junction Transistor (BJT) with a 600mA collector current. This BJT features a 180V collector-base voltage, 160V collector-emitter voltage, 6V emitter-base voltage, 200mA collector power dissipation and comes in a SOT-363 package. The MMDT5551HE3 transistor also features a 6pF maximum output capacitance, 300MHz maximum transition frequency, and a -55°C to 150°C operating junction temperature range. This BJT adheres to Moisture Sensitivity Level 1 (MSL 1), and the epoxy meets the UL 94V-0 flammability rating. The MMDT5551HE3 transistor is lead-free, halogen-free, and RoHS-compliant.