SiC Schottky Discrete Diodes

SemiQ SiC Schottky Discrete Diodes feature near-zero switching loss and reduced heat dissipation, increasing efficiency and requiring smaller heatsinks. The SiC Schottky Discrete Diodes are easy to parallel with fast, temperature-independent switching. The SemiQ SiC Schottky Discrete Diodes are designed for solar inverters, power supplies, motor drives, and charging station applications.

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数量 RoHS ECAD模型 安装风格
封装 / 箱体
配置
If - 正向电流
Vrrm - 重复反向电压
Vf - 正向电压
Ifsm - 正向浪涌电流
Ir - 反向电流
最小工作温度
最大工作温度
封装
SemiQ 碳化硅肖特基二极管 SiC Schottky Diode 6A 650V TO-220-2L-FP
数据表

Through Hole TO-220-2L Single 6 A 650 V 1.65 V 35 A 6 uA - 55 C + 175 C Tube
SemiQ 碳化硅肖特基二极管 SiC Schottky Diode 8A 650V TO-220-2L-FP
数据表

Through Hole TO-220-2L Single 8 A 650 V 1.61 V 74 A 9 uA - 55 C + 175 C Tube
SemiQ 碳化硅肖特基二极管 SiC Schottky Diode 16A 650V TO-247-3
数据表

Through Hole TO-247-3 Dual Anode Common Cathode 16 A 650 V 1.61 V 74 A 9 uA - 55 C + 175 C Tube
SemiQ 碳化硅肖特基二极管 SiC Schottky Diode 20A 1200V TO-220
数据表

Through Hole TO-220-2L Single 20 A 1.2 kV 2.03 V 150 A 17 uA - 55 C + 175 C Tube
SemiQ 碳化硅肖特基二极管 SiC Schottky Diode 50A 650V TO-247-2
数据表

Through Hole TO-247-2 Single 50 A 650 V 1.77 V 300 A 22 uA - 55 C + 175 C Tube