iS20M5R5S1T 200V N-channel SuperQ™ Power MOSFETs

iDEAL Semiconductor iS20M5R5S1T 200V N-channel SuperQ™ power MOSFETs are designed for high‑efficiency switching applications. These MOSFETs feature ultra‑low RDS(on) of 5.5mΩ, enabling reduced conduction losses and improved thermal performance. With the low switching losses (QSW and EOSS) and 112 nC gate charge, these MOSFETs enhance efficiency in both full‑ and partial‑load conditions. The iS20M5R5S1T MOSFETs are fully UIS‑tested and provide high Short‑Circuit Withstand Capability (SCWC) for improved reliability. These power MOSFETs support a high continuous drain current of 151A, making them suitable for demanding power stages like motor control, synchronous rectification, and SMPS designs.

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数量 RoHS ECAD模型 技术
安装风格
封装 / 箱体
晶体管极性
通道数量
Vds-漏源极击穿电压
Id-连续漏极电流
Rds On-漏源导通电阻
Vgs - 栅极-源极电压
Vgs th-栅源极阈值电压
Qg-栅极电荷
最小工作温度
最大工作温度
Pd-功率耗散
通道模式
商标名
封装
iDEAL Semiconductor MOSFET SuperQ MOSFET 200 V, 5.5m max, normal threshold level in TOLL package
数据表

Si SMD/SMT TOLL-8 N-Channel 1 Channel 200 V 151 A 5.5 mOhms 20 V 4.1 V 112 nC - 55 C + 175 C 314 W Enhancement SuperQ Bulk
iDEAL Semiconductor MOSFET SuperQ MOSFET 200 V, 5.5m max, normal threshold level in TOLL package
数据表

Si SMD/SMT TOLL-8 N-Channel 1 Channel 200 V 151 A 5.5 mOhms 20 V 4.1 V 112 nC - 55 C + 175 C 314 W Enhancement SuperQ Reel