104 MHz 半导体

半导体类型

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结果: 660
选择 图像 零件编号 制造商 描述 数据表 供货情况 单价(含13%增值税) 根据您的数量,按照单价筛选表格中的结果。 数量 RoHS
GigaDevice GD5F1GQ5UEY2GR
GigaDevice NAND闪存

GigaDevice GD5F2GM7REBIGY
GigaDevice NAND闪存

GigaDevice GD5F2GM7REY2GR
GigaDevice NAND闪存

GigaDevice GD5F2GM7REYJGR
GigaDevice NAND闪存

GigaDevice GD5F2GQ5REY2GR
GigaDevice NAND闪存

GigaDevice GD5F2GQ5UEY2GR
GigaDevice NAND闪存

GigaDevice GD5F4GM8REY2GY
GigaDevice NAND闪存

Macronix MX25U12835FBBI-10G-TR
Macronix NOR闪存 Serial NOR 1.8V 128Mbit x4 I/O WLCSP-23

ISSI NAND闪存 1Gb, 8bit ECC, 24-ball TFBGA 6x8x1.2 mm, 1.8V, RoHS, IT, T&R

ISSI NAND闪存 1Gb, 8bit ECC, 8-contact WSON 8x6mm, 1.8V, RoHS, IT, T&R


ISSI NAND闪存 2Gb, 8bit ECC, 24-ball TFBGA 6x8x1.2 mm, 1.8V, RoHS, IT, T&R

ISSI NAND闪存 2Gb, 8bit ECC, 8-contact WSON 8x6mm, 1.8V, RoHS, IT, T&R


ISSI NAND闪存 4Gb, 8bit ECC, 24-ball TFBGA 6x8x1.2 mm, 1.8V, RoHS, IT, T&R

ISSI NAND闪存 4Gb, 8bit ECC, 8-contact WSON 8x6mm, 1.8V, RoHS, IT, T&R


ISSI NAND闪存 1Gb, 8bit ECC, 24-ball TFBGA 6x8x1.2 mm, 1.8V, RoHS, Auto Grade, T&R

ISSI NAND闪存 1Gb, 8bit ECC, 8-contact WSON 8x6mm, 1.8V, RoHS, Auto Grade, T&R


ISSI NAND闪存 2Gb, 8bit ECC, 24-ball TFBGA 6x8x1.2 mm, 1.8V, RoHS, Auto Grade, T&R

ISSI NAND闪存 2Gb, 8bit ECC, 8-contact WSON 8x6mm, 1.8V, RoHS, Auto Grade, T&R


ISSI NAND闪存 4Gb, 8bit ECC, 24-ball TFBGA 6x8x1.2 mm, 1.8V, RoHS, T&R, Auto Grade

ISSI NAND闪存 4Gb, 8bit ECC, 8-contact WSON 8x6mm, 1.8V, RoHS, T&R, Auto Grade


ISSI NAND闪存 2Gb, 8bit ECC, 24-ball TFBGA 6x8x1.2 mm, 1.8V, RoHS, IT

ISSI 动态随机存取存储器 64Mb, SerialRAM, Continuous Operation, 1.65V-1.95V, 104MHz, 8 pin SOIC 150 mil, RoHS

ISSI 动态随机存取存储器 64Mb, SerialRAM, Continuous Operation, 2.7V-3.6V, 104MHz, 8 pin SOIC 150 mil, RoHS


ISSI NAND闪存 1Gb, 8bit ECC, 24-ball TFBGA 6x8x1.2 mm, 1.8V, RoHS, Auto Grade

ISSI NAND闪存 1Gb, 8bit ECC, 8-contact WSON 8x6mm, 1.8V, RoHS, Auto Grade