FDMC8588

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请参阅产品规格

Mouser编号：

512-FDMC8588

制造商编号：

FDMC8588

制造商：

onsemi

说明：

MOSFET Thin gate 25/12V NCh PowerTrench MOSFET

数据表:

FDMC8588 数据表 (PDF)

ECAD模型:

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产品属性	属性值	选择属性
制造商:	onsemi
产品种类:	MOSFET
RoHS:
REACH - SVHC:
技术:	Si
安装风格:	SMD/SMT
封装 / 箱体:	Power-33-8
晶体管极性:	N-Channel
通道数量:	1 Channel
Vds-漏源极击穿电压:	25 V
Id-连续漏极电流:	17 A
Rds On-漏源导通电阻:	5.7 mOhms
Vgs - 栅极-源极电压:	12 V
Vgs th-栅源极阈值电压:	800 mV
Qg-栅极电荷:	12 nC
最小工作温度:	- 55 C
最大工作温度:	+ 150 C
Pd-功率耗散:	2.4 W
通道模式:	Enhancement
商标名:	PowerTrench
封装:	Reel
商标:	onsemi
配置:	Single
产品类型:	MOSFETs
系列:	FDMC8588
工厂包装数量:	3000
子类别:	Transistors
单位重量:	32.130 mg

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已选择的属性: 0

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数据表

FDMC8588 数据表 (PDF)

EOL

PCN

合规代码

CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 8541290100
KRHTS:: 8541299000
TARIC:: 8541290000
MXHTS:: 85412999
ECCN:: EAR99

原产地分类

原产国:: 菲律宾
组装原产国/地区:: 不可用
扩散国家:: 不可用

发货时，国家/地区可能会发生变化。

Power Trench MOSFETs EXPANSION

ON Semiconductor has expanded its line of Power Trench MOSFETs to offer different drain-to-source voltages, drain current and R_DS(ON). Additional features in this expansion of the ON Semiconductor Power Trench® MOSFETs include advanced package and silicon combination for low R_DS(ON) and high efficiency, thermally efficient packages, and next generation enhanced body diode technology engineered for soft recovery. Applications for these Power Trench® MOSFETs include synchronous rectifiers for DC/DC converters, notebook or networking low side switch, telecom secondary side rectification, load switches, and many more.
Learn More

ON Semiconductor offers both N-Channel and P-Channel versions of MOSFETs using their advanced Power Trench process that has been optimized for low R_DS(ON) switching performance and ruggedness.
View the entire Power Trench® MOSFETs offering