FDMS3602S

onsemi
512-FDMS3602S
FDMS3602S

制造商：

说明：
MOSFET 25V Dual N-Channel PowerTrench MOSFET

寿命周期:
寿命结束:
将过时且制造商将停产。
数据表:
ECAD模型:
下载免费库加载程序，将此文件转换，以供您的ECAD工具使用。了解详情。

产品属性 属性值 选择属性
onsemi
产品种类: MOSFET
RoHS:  
REACH - SVHC:
Si
SMD/SMT
Power-56-8
N-Channel
2 Channel
25 V
15 A
5.6 mOhms
20 V
3 V
19 nC, 45 nC
- 55 C
+ 150 C
2.5 W
Enhancement
Power Stage PowerTrench
Reel
Cut Tape
MouseReel
商标: onsemi
配置: Dual
下降时间: 1.8 ns, 3.2 ns
正向跨导 - 最小值: 67 S, 132 S
产品类型: MOSFETs
上升时间: 2 ns, 4.2 ns
系列: FDMS3602S
工厂包装数量: 3000
子类别: Transistors
晶体管类型: 2 N-Channel
典型关闭延迟时间: 19 nS, 31 nS
典型接通延迟时间: 7.9 nS, 12 nS
单位重量: 90 mg
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已选择的属性: 0

合规代码
CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
8541290100
KRHTS:
8541299000
TARIC:
8541290000
ECCN:
EAR99
原产地分类
原产国:
菲律宾
组装原产国/地区:
不可用
扩散国家:
不可用
发货时，国家/地区可能会发生变化。

Fairchild Power Trench™ MOSFETs

Fairchild's PowerTrench® MOSFETs are optimized power switches combining small gate charge (QG), small reverse recovery charge (Qrr) and soft reverse recovery body diode, which contributes to fast switching for synchronous rectification in AC/DC power supplies. These PowerTrench® MOSFETs, employ shielded-gate structure that provides charge balance. By utilizing Fairchild's advanced technology, the FOM (figure of merit) of these devices is 66 percent lower than that of the previous generation. The soft body diode performance of these PowerTrench® MOSFETs are able to eliminate snubber circuit or replace higher voltage rating - MOSFETs that need this circuit because it can minimize the undesirable voltage spikes in synchronous rectification. These Fairchild PowerTrench® MOSFETs provide designers the opportunity to significantly increase system efficiency and power density in synchronous rectification applications.
Learn More

Power Trench MOSFETs EXPANSION

ON Semiconductor has expanded its line of Power Trench MOSFETs to offer different drain-to-source voltages, drain current and RDS(ON). Additional features in this expansion of the ON Semiconductor Power Trench® MOSFETs include advanced package and silicon combination for low RDS(ON) and high efficiency, thermally efficient packages, and next generation enhanced body diode technology engineered for soft recovery. Applications for these Power Trench® MOSFETs include synchronous rectifiers for DC/DC converters, notebook or networking low side switch, telecom secondary side rectification, load switches, and many more.
Learn More

ON Semiconductor offers both N-Channel and P-Channel versions of MOSFETs using their advanced Power Trench process that has been optimized for low RDS(ON) switching performance and ruggedness.
View the entire Power Trench® MOSFETs offering

库存量: 45

库存：
45 可立即发货
该产品已停产，库存售罄后将不再提供。
最少： 1   倍数： 1
单价:
¥-.--
总价:
¥-.--
预估关税:
封装:
整卷卷轴（请按3000的倍数订购）

定价 (含13% 增值税)

数量 单价
总价
剪切带/MouseReel™ †
¥33.4141 ¥33.41
¥21.922 ¥219.22
¥16.2946 ¥1,629.46
¥13.4018 ¥6,700.90
¥13.0741 ¥13,074.10
整卷卷轴（请按3000的倍数订购）
¥11.8311 ¥35,493.30
† ¥15.00 MouseReel™费将被加上并在购物车计算。所有MouseReel™订单均不可撤消和退回。 ↩

出现意外错误。


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