MHT1002N
未分配
MHT1002N
制造商:
说明:
射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF Power LDMOS Transistor for Consumer and Commercial Cooking, 915 MHz, 350 W, 48 V
射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF Power LDMOS Transistor for Consumer and Commercial Cooking, 915 MHz, 350 W, 48 V
数据表:

中国