ISSI Ultra-Low Power SRAM includes high-speed (35ns, 45ns, 55ns access time) CMOS devices as well as Asynchronous SRAM with x8, x16, and x32 configurations. ISSI IS62/65WV2568DALL and IS62/65WV2568DBLL are high-speed, 2Mb static RAMs organized as 256K words by 8 bits. These SRAM devices are fabricated using ISSI high-performance CMOS technology. This highly reliable process, coupled with innovative circuit design techniques, yields high-performance and low-power-consumption devices. ISSI Asynchronous SRAMs include 5V, High-Speed/Low Power, Ultra-Low Power, and Pseudo SRAM (PSRAM)/CellularRAM™. These Asynchronous SRAMs are used throughout Consumer, Industrial, Automotive, Telecom, and Networking applications.
