- 40 C NAND闪存

结果: 392
选择 图像 零件编号 制造商 描述 数据表 供货情况 单价(含13%增值税) 根据您的数量,按照单价筛选表格中的结果。 数量 RoHS ECAD模型 安装风格 封装 / 箱体 系列 存储容量 接口类型 组织 定时类型 数据总线宽度 电源电压-最小 电源电压-最大 电源电流—最大值 最小工作温度 最大工作温度 封装
GigaDevice GD5F4GM8UEYJGR
GigaDevice NAND闪存

SMD/SMT WSON-8 4 Gbit DTR/Dual/Quad SPI, SPI Synchronous 2.7 V 3.6 V - 40 C + 105 C Reel
GigaDevice GD9FS1G8F2DDGI
GigaDevice NAND闪存

SMD/SMT FBGA-48 1 Gbit Parallel 128 M x 8 Asynchronous 8 bit 1.7 V 1.95 V - 40 C + 85 C Tray
GigaDevice GD9FS1G8F2DLGI
GigaDevice NAND闪存

SMD/SMT FBGA-63 1 Gbit Parallel 128 M x 8 Asynchronous 8 bit 1.7 V 1.95 V - 40 C + 85 C Tray
GigaDevice GD9FS4G8F4DLGI
GigaDevice NAND闪存

SMD/SMT FBGA-63 4 Gbit Parallel Asynchronous 1.7 V 1.95 V - 40 C + 85 C Tray
GigaDevice GD9FS4G8F4DMGI
GigaDevice NAND闪存

SMD/SMT TSOP-I-48 4 Gbit Parallel Asynchronous 1.7 V 1.95 V - 40 C + 85 C Tray
GigaDevice GD9FS8G8E4DLGI
GigaDevice NAND闪存

SMD/SMT FBGA-63 8 Gbit Parallel Asynchronous 1.7 V 1.95 V - 40 C + 85 C Tray
GigaDevice GD9FS8G8E4DMGI
GigaDevice NAND闪存

SMD/SMT TSOP-I-48 8 Gbit Parallel Asynchronous 1.7 V 1.95 V - 40 C + 85 C Tray
GigaDevice GD9FU1G8F2DDGI
GigaDevice NAND闪存

SMD/SMT FBGA-48 1 Gbit Parallel 128 M x 8 Asynchronous 8 bit 2.7 V 3.6 V - 40 C + 85 C Tray
GigaDevice GD9FU1G8F2DLGI
GigaDevice NAND闪存

SMD/SMT FBGA-63 1 Gbit Parallel 128 M x 8 Asynchronous 8 bit 2.7 V 3.6 V - 40 C + 85 C Tray
GigaDevice GD9FU4G8F4DLGI
GigaDevice NAND闪存

SMD/SMT FBGA-63 4 Gbit Parallel Asynchronous 2.7 V 3.6 V - 40 C + 85 C Tray
GigaDevice GD9FU4G8F4DMGI
GigaDevice NAND闪存

SMD/SMT TSOP-I-48 4 Gbit Parallel Asynchronous 2.7 V 3.6 V - 40 C + 85 C Tray
GigaDevice GD9FU8G8E4DLGI
GigaDevice NAND闪存

SMD/SMT FBGA-63 8 Gbit Parallel Asynchronous 2.7 V 3.6 V - 40 C + 85 C Tray
GigaDevice GD9FU8G8E4DMGI
GigaDevice NAND闪存

SMD/SMT TSOP-I-48 8 Gbit Parallel Asynchronous 2.7 V 3.6 V - 40 C + 85 C Tray
ISSI NAND闪存 4Gb (x8, 8bit ECC), TSOP-48, 3V, RoHS, IT, T&R, , AutoGrade

SMD/SMT VFBGA-63 4 Gbit Parallel 512 M x 8 Asynchronous 8 bit 2.7 V 3.6 V - 40 C + 105 C Reel
ISSI NAND闪存 4Gb (x16, 8bit ECC), 63 Ball VFBGA, 3V, RoHS, IT, T&R, AutoGrade

SMD/SMT VFBGA-63 4 Gbit Parallel 256 M x 16 Asynchronous 16 bit 2.7 V 3.6 V - 40 C + 105 C Reel

ISSI NAND闪存 2Gb, 8bit ECC, 24-ball TFBGA 6x8x1.2 mm, 3.3V, RoHS, IT, T&R

SMD/SMT TFBGA-24 2 Gbit SPI 256 M x 8 8 bit 2.7 V 3.6 V 22 mA - 40 C + 85 C Reel
ISSI NAND闪存 2Gb, 8bit ECC, 8-contact WSON 8x6mm, 3.3V, RoHS, IT, T&R

SMD/SMT WSON-8 2 Gbit SPI 256 M x 8 8 bit 2.7 V 3.6 V 22 mA - 40 C + 85 C Reel

ISSI NAND闪存 1Gb, 8bit ECC, 24-ball TFBGA 6x8x1.2 mm, 1.8V, RoHS, IT, T&R

SMD/SMT TFBGA-24 1 Gbit SPI 64 M x 16 1.7 V 1.95 V 18 mA - 40 C + 85 C Reel
ISSI NAND闪存 1Gb, 8bit ECC, 8-contact WSON 8x6mm, 1.8V, RoHS, IT, T&R

SMD/SMT WSON-8 1 Gbit SPI 64 M x 16 1.7 V 1.95 V 18 mA - 40 C + 85 C Reel

ISSI NAND闪存 2Gb, 8bit ECC, 24-ball TFBGA 6x8x1.2 mm, 1.8V, RoHS, IT, T&R

SMD/SMT 2 Gbit SPI 128 M x 16 1.7 V 1.95 V 18 mA - 40 C + 85 C Reel
ISSI NAND闪存 2Gb, 8bit ECC, 8-contact WSON 8x6mm, 1.8V, RoHS, IT, T&R

SMD/SMT WSON-8 2 Gbit SPI 128 M x 16 1.7 V 1.95 V 18 mA - 40 C + 85 C Reel

ISSI NAND闪存 4Gb, 8bit ECC, 24-ball TFBGA 6x8x1.2 mm, 1.8V, RoHS, IT, T&R

SMD/SMT TFBGA-24 4 Gbit SPI 128 M x 16 8-bit 1.7 V 1.95 V 18 mA - 40 C + 85 C Reel
ISSI NAND闪存 4Gb, 8bit ECC, 8-contact WSON 8x6mm, 1.8V, RoHS, IT, T&R

SMD/SMT WSON-8 4 Gbit SPI 128 M x 16 8-bit 1.7 V 1.95 V 18 mA - 40 C + 85 C Reel

ISSI NAND闪存 2Gb, 8bit ECC, 24-ball TFBGA 6x8x1.2 mm, 1.8V, RoHS, Auto Grade, T&R

SMD/SMT TFBGA-24 2 Gbit SPI 256 M x 8 8 bit 2.7 V 3.6 V 22 mA - 40 C + 105 C Reel
ISSI NAND闪存 2Gb, 8bit ECC, 8-contact WSON 8x6mm, 1.8V, RoHS, Auto Grade, T&R

SMD/SMT WSON-8 2 Gbit SPI 256 M x 8 8 bit 2.7 V 3.6 V 22 mA - 40 C + 105 C Reel