ADLINK Technology 存储器模块和存储卡

内存模块和内存卡类型

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选择 图像 零件编号 制造商 描述 数据表 供货情况 单价(含13%增值税) 根据您的数量,按照单价筛选表格中的结果。 数量 RoHS
ADLINK Technology DDR4 2666 260P 16GB ECC SO-DIMM INDUS
ADLINK Technology 存储器模块 DDR4-2666, 16GB, 2Gx72, SO-DIMM 260P, 1.2V, Rank:2, CL19, ECC, OP Temp:-40-85, Fix Die:No(C-die), Samsung Chip(1Gx8), anti-sulfur
ADLINK Technology DDR4 2666 260P 16GB ECC SO-DIMM
ADLINK Technology 存储器模块 DDR4-2666, 16GB, 2Gx72, SO-DIMM 260P, 1.2V, Rank:2, CL19, ECC, OP Temp:0-85, Fix Die:No(C-die), Samsung Chip(1Gx8), anti-sulfur
ADLINK Technology DDR4 2400 260P 16GB SO-DIMM 2Rx16
ADLINK Technology 存储器模块 DDR4-2400, 16GB, 2Gx64, SO-DIMM 260P, 1.2V, Rank:2, CL17, Non-ECC, OP Temp:0-85, Fix Die:No, Samsung Chip(1Gx8)
ADLINK Technology DDR4 2400 260P 4GB SODIMM 1Rx8
ADLINK Technology 存储器模块 DDR4-2400, 4GB, 512Mx64, SO-DIMM 260P, 1.2V, Rank:1, CL17, Non-ECC, OP Temp:0 85, Fix Die:No(F-die), Samsung Chip(512Mx8)
ADLINK Technology DDR4 2400 260P 4GB non-ECC SODIMM
ADLINK Technology 存储器模块 DDR4-2400, 4GB, 512x64, SO-DIMM 260P, 1.2V, Rank:1, CL17, non-ECC, OP Temp:0-85, Fix Die:No, Samsung Chip(512M x16*4 ) height:30mm
ADLINK Technology DDR4 2400 260P 8GB NON ECC SO DIMM
ADLINK Technology 存储器模块
ADLINK Technology DDR4 2400 260P 8GB NON-ECC SODIMM INDUS
ADLINK Technology 存储器模块 DDR4-2400, 8GB, 1024Mx64, SO-DIMM 260P, 1.2V, Rank:2, CL17, non-ECC, OP Temp:-40-85, Fix Die:No, Samsung Chip(512M x8*16 ) height:30mm
ADLINK Technology DDR4 2400 260P 16GB Non ECC SODIMM
ADLINK Technology 存储器模块 DDR4-2400, 16GB, 1Gx64, SO-DIMM 260P, 1.2V, Rank:2, CL17, Non-ECC, OP Temp:-40-85, Fix Die:No, Chip(1Gx8)
ADLINK Technology DDR4 2400 260P 16GB NON ECCSO DIMM
ADLINK Technology 存储器模块 DDR4-2400, 16GB, 2Gx64, SO-DIMM 260P, 1.2V, Rank:2, CL17, Non-ECC, OP Temp:-40-85, Fix Die:No, Chip(1Gx8), with comformal coating
ADLINK Technology DDR4 2400 288P 16GB ECC DIMM
ADLINK Technology 存储器模块 DDR4-2666, 32GB, 4Gx72, SO-DIMM 260P, 1.2V, Rank:2, CL19, ECC, OP Temp:0-85, Samsung Fix Die:No, Chip(2Gx8)
ADLINK Technology DDR4 2400 288P 8GB REG-DIMM
ADLINK Technology 存储器模块 DDR4-2400, 8GB, 1Gx72, R-DIMM 288P, 1.2V, Rank:1, CL17, ECC, OP Temp:0-85, Fix Die:Yes(C-die), Samsung Chip(1Gx8)
ADLINK Technology DDR4 2400 260P 8GB SODIMM 2Rx16
ADLINK Technology 存储器模块 DDR4-2400, 8GB, 1Gx64, SO-DIMM 260P, 1.2V, Rank:2, CL17, Non-ECC, OP Temp:0 85, Fix Die:No, Samsung Chip(512Mx8)
ADLINK Technology DDR4 2400 8GB SO-DIMM
ADLINK Technology 存储器模块 DDR4-2400, 8GB, 1Gx64, SO-DIMM 260P, 1.2V, Rank:1, CL17, Non-ECC, OP Temp:0-85, Fix Die:No, Chip(1Gx8)
ADLINK Technology DDR4 2400 ECC 260P 8GB
ADLINK Technology 存储器模块 DDR4-2400, 8GB, 1Gx72, SO-DIMM 260P, 1.2V, Rank:2, CL17, ECC, OP Temp:0 85, Fix Die:No, Samsung Chip(512Mx8)
ADLINK Technology DDR4 260P 3200MHz 16G 2GX8
ADLINK Technology 存储器模块 DDR4-3200, 16GB, 2Gx64, SO-DIMM 260P, 1.2V, Rank:1, CL22, Non-ECC, OP Temp:-40-85, Fix Die:No(A-die), Samsung Chip(2Gx8), hight:30mm
ADLINK Technology INNODISK DDR4 260P 3200MHZ 4G
ADLINK Technology 存储器模块 DDR4-3200, 4GB, 512Mx64, SO-DIMM 260P, 1.2V, Rank:1, CL22, Non-ECC, OP Temp:-40 85, Fix Die:No, Chip(512Mx8)
ADLINK Technology DDR4 2666-19 288P 16GB ECC DIMM
ADLINK Technology 存储器模块 DDR4-2666, 16GB, 2Gx72, SO-DIMM 288P, 1.2V, Rank:2, CL19, ECC, OP Temp:0-85, Samsung Fix Die:Yes(C-die), Chip(1Gx8), anti-sulfur
ADLINK Technology DDR4 2666 260P 16GB non-ECC SO-DIMM
ADLINK Technology 存储器模块 DDR4-2666, 16GB, 2Gx64, SO-DIMM 260P, 1.2V, Rank:2, CL19, Non-ECC, OP Temp:0-85, Fix Die:No(C-die), Samsung Chip(1Gx8)
ADLINK Technology DDR4 2666 260P 2GB non-ECC SO-DIMM
ADLINK Technology 存储器模块 DDR4-2666, 2GB, 256Mx64, SO-DIMM 260P, 1.2V, Rank:1, CL19, Non-ECC, OP Temp:0-85, Fix Die:No(F-die), Samsung Chip(256Mx16)
ADLINK Technology DDR4 2666 260P 4GB non-ECC SO-DIMM
ADLINK Technology 存储器模块 DDR4-2666, 4GB, 512Mx64, SO-DIMM 260P, 1.2V, Rank:1, CL19, Non-ECC, OP Temp:0-85, Fix Die:No(F-die), Samsung Chip(512Mx8)
ADLINK Technology DDR4 2666 260P 8GB ECC SO-DIMM
ADLINK Technology 存储器模块 DDR4-2666, 8GB, 1Gx72, SO-DIMM 260P, 1.2V, Rank:1, CL19, ECC, OP Temp:0-85, Fix Die:No(C-die), Samsung Chip(1Gx8), anti-sulfur
ADLINK Technology DDR4 2666 260P 8GB non-ECC SO-DIMM
ADLINK Technology 存储器模块 DDR4-2666, 8GB, 1Gx64, SO-DIMM 260P, 1.2V, Rank:1, CL19, Non-ECC, OP Temp:0-85, Fix Die:No(C-die), Samsung Chip(1Gx8)
ADLINK Technology DDR4 2666 260P 8GB ECC SO-DIMM INDUS
ADLINK Technology 存储器模块 DDR4-2666, 8GB, 1Gx72, SO-DIMM 260P, 1.2V, Rank:1, CL19, ECC, OP Temp:-40-85, Fix Die:No(C-die), Samsung Chip(1Gx8), anti-sulfur
ADLINK Technology DDR4 2666 260P 32GB ECC
ADLINK Technology 存储器模块 DDR4-2666, 32GB, 4Gx72, SO-DIMM 260P, 1.2V, Rank:2, CL19, ECC, OP Temp:0-85, Fix Die:No, Samsung Chip(2Gx8)
ADLINK Technology DDR4 2666 288P 16GB VLP RDIMM
ADLINK Technology 存储器模块 DDR4-2666, 16GB, 2Gx72, VLP R-DIMM 288P, 1.2V, Rank:2, CL19, ECC, OP Temp:0-85, Fix Die:No, Chip(1Gx8)